STC8050

STC8050 SUNTAC | Alldatasheet

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S NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted hFEClassification Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage I C= 100µA, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC= 2mA, IB=0 40 V BVEBO Emitter-Base Breakdown Voltage IE= 100µA, IC=0 6 V ICBO Collector Cut-off Current VCB= 35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB= 6V, IC=0 100 nA hFE1 hFE2 hFE3 DC Current Gain V CE= 1V, IC= 5mA VCE= 1V, IC= 100mA VCE= 1V, IC= 800mA 170 160 300 VCE (sat) Collector-Emitter Saturation Voltage I C= 800mA, IB= 80mA 0.28 0.5 V VBE (sat) Base-Emitter Saturation Voltage I C= 800mA, IB= 80mA 0.98 1.2 V VBE (on) Base-Emitter on Voltage V CE= 1V, IC= 10mA 0.66 1 .0 V Cob Output Capacitance VCB= 10V, IE=0 f=1MHz 15 pF fT Current Gain Bandwidth Product VCE= 10V, IC= -50mA 100 200 MHz Classification A B C hFE2 85 ~ 160 120 ~ 200 200 ~ 400 1. Emitter 2. Base 3. Collector 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

• Complimentary to STC8550  Collector Current: I C=1.5A  Collector Power Dissipation: P C=2W (TC=25°C) TO-921 STC8050 NPN Silicon Transistor