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N&P Pair Enhancement Mode MOSFET 10.0A / s10.0A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

DESCRIPTION

The STC4614 is the N & PsChannel enhancement mode p ower field effect transistor using high cell densit y DMOS trench technology. This high density process i s especially tailored to minimize onsstate resistan ce and provide superior switching performance. This de vice is particularly suited for low voltage applica tion such as notebook computer power management and othe r battery powered circuits, where highsside switching, low insline power loss and resistance to transient are needed . PIN CONFIGURATION SOP-8 PART MARKING Y∶Year A ∶Product code

ORDERING INFORMATION

Part Number Package Part Marking STC4614S8RG SOPs8 STC4614 STC4614S8TG SOPs8 STC4614 ※ Process Code : A ~ Z ; a ~ z ※ STC4614S8RG S8 : SOPs8 ; R : Tape Reel ; G : Pb – Free ※ STC4614S8TG S8 : SOPs8 ; T : Tube ; G : Pb – Free FEATURE N-Channel /circle6 40V/10.0A, R DS(ON) = 25mR(Typ.) @V GS = 10V /circle6 40V/6.0A, R DS(ON) = 32mΩ @V GS = 4.5V P-Channel /circle6 s40V/s10.0A, R DS(ON) = 37mΩ(Typ.) @V GS = s10V /circle6 s40V/s5.0A, R DS(ON) = 43mΩ @V GS = s 4.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onsresistance and maximum DC current capability /circle6 SOPs8 package

N&P Pair Enhancement Mode MOSFET 10.0A / s10.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STC4614 2008. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical N P Unit DrainsSource Voltage V DSS 40 s40 V GatesSource Voltage V GSS ±20 ±20 V Continuous Drain Current (TJ=150 ℃) T A=25 ℃ TA=70 ℃ ID 10.0 7.0 s10.0 s6.0 A Pulsed Drain Current I DM 20 s20 A Continuous Source Current (Diode Conduction) I S 2.5 s2.5 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 2.5 1.8 2.5 1.8 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG s55/150 ℃ Thermal ResistancesJunction to Ambient T≦10Sec Sready State RθJA 62.5 110 62.5 110 ℃/W

N&P Pair Enhancement Mode MOSFET 10.0A / s10.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STC4614 2008. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static DrainsSource Breakdown Voltage V (BR)DSS VGS =0V,I D=10mA VGS =0V,I D=s10mA N P s40 V Gate Threshold Voltage V GS(th) VDS =VGS,I D=250 uA VDS =VGS,I D=s250uA N P 1.0 s1.0 3.0 s3.0 V Gate Leakage Current I GSS VDS =0V,V GS =±20V VDS =0V,V GS =±20V N P ±100 ±100 nA Zero Gate Voltage Drain Current I DSS TJ=55 ℃ VDS =32V,V GS =0V VDS =s32V,V GS =0V N P uA VDS =32V,V GS =0V VDS =s32V,V GS =0V N P OnsState Drain Current I D(on) VDS ≧5V,V GS =10V VDS ≦s5V,V GS =s10V N P s20 A Drainssource OnsResistance RDS(on) VGS =10V, I D=10.0A VGS =s10V,I D=s10.0A N P 0.025 0.035 0.030 0.043 Ω VGS =4.5V, I D=6.0A VGS =s4.5V,I D=s5.0 A N P 0.030 0.043 0.037 0.052 Forward Tran Conductance gfs VDS =5V,I D=6.9A VDS =s15V,I D=s5.9A N P 13 S Diode Forward Voltage V SD IS=1.0A,V GS =0V IS=s1.7A,V GS =0V N P 1.2 s1.2 V Dynamic Total Gate Charge Q g N-Channel VDS =20V,V GS =10V ID≡6.0A P-Channel VDS =s20V,V GS =s10V ID≡s5.0A N P 8.3 13.6 10.0 15.0 nC GatesSource Charge Q gs N P 1.3 1.8 2.0 2.5 GatesDrain Charge Q gd N P 2.3 4.0 3.0 5.0 TurnsOn Time td(on) tr N-Channel VDS =20V,R L=3.3 Ω ID=1A,R GEN =3 Ω P-Channel VDS =s20V,R L=4.0 Ω ID=s1A,R GEN =s3Ω N P 4.6 7.7 6.0 11.5 nS N P 3.1 6.7 TurnsOff Time td(off) tf N P 15.6 26.2 N P 3.0 11.2 4.0

Product Information

STC4614 specifications and overview.

Summary

N&P Pair Enhancement Mode MOSFET

Description

N&P Pair Enhancement Mode MOSFET

Source title STC4614 Datasheet(PDF) - Stanson Technology

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