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N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

DESCRIPTION

The STC4606 is the N & P-Channel enhancement mode p ower field effect transistor using high cell densit y DMOS trench technology. This high density process i s especially tailored to minimize on-state resistan ce and provide superior switching performance. This de vice is particularly suited for low voltage applica tion such as notebook computer power management and othe r battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed . PIN CONFIGURATION SOP-8 PART MARKING SOP-8 Y ∶Year A ∶Date Code FEATURE N-Channel 30V/6.9A, R DS(ON) = 30mΩ （Typ ） @V GS = 10V 30V/6.0A, R DS(ON) = 46mΩ @V GS = 4.5V P-Channel -30V/-6.0A, R DS(ON) = 41mΩ （Typ ） @V GS = -10V -30V/-5.0A, R DS(ON) = 60mΩ @V GS = - 4.5V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package

N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STC4606 2008. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical N P Unit Drain-Source Voltage V DSS 30 -30 V Gate-Source Voltage V GSS ±20 ±20 V Continuous Drain Current (TJ=150 ℃) T A=25 ℃ TA=70 ℃ ID 6.5 5.8 -6.9 -5.0 A Pulsed Drain Current I DM 26 -30 A Continuous Source Current (Diode Conduction) I S 3.0 -3.0 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 2.0 1.44 2.0 1.44 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient T≦10Sec Sready State RθJA 62.5 110 62.5 110 ℃/W

N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STC4606 2008. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS =0V,I D=250uA VGS =0V,I D=-250uA N P -30 V Gate Threshold Voltage V GS(th) VDS =VGS,I D=250 uA VDS =VGS,I D=-250uA N P 0.8 -1.0 1.8 -2.0 V Gate Leakage Current I GSS VDS =0V,V GS =±20V VDS =0V,V GS =±20V N P ±100 ±100 nA VDS =24V,V GS =0V VDS =-24V,V GS =0V N P -1 Zero Gate Voltage Drain Current I DSS TJ=55 ℃ VDS =24V,V GS =0V VDS =-24V,V GS =0V N P uA On-State Drain Current I D(on) VDS ≧5V,V GS =10V VDS ≦-5V,V GS =-10V N P -30 A VGS =10V, I D=6.9A VGS =-10V,I D=-6.0A N P 0.030 0.041 0.040 0.056 Drain-source On-Resistance RDS(on) VGS =4.5V, I D=5.0A VGS =-4.5V,I D=-5.0 A N P 0.046 0.060 0.055 0.072 Ω Forward Tran Conductance gfs VDS =5V,I D=6.9A VDS =-15V,I D=-5.9A N P 13 S Diode Forward Voltage V SD IS=1.0A,V GS =0V IS=-1.7A,V GS =0V N P 0.7 -0.7. 1.0 -1.0 V Dynamic Total Gate Charge Q g N P 13.8 18.5 16.6 22.2 Gate-Source Charge Q gs N P 1.8 2.7 Gate-Drain Charge Q gd N-Channel VDS =15V,V GS =10V ID≡6.9A P-Channel VDS =-15V,V GS =-10V ID≡5.0A N P 2.0 4.5 nC N P 4.6 7.7 11.5 Turn-On Time td(on) tr N P 4.1 5.7 8.5 N P 20.6 20.2 Turn-Off Time td(off) tf N-Channel VDS=10V,R L=2.2 Ω ID=1A,V GEN =10V RG=3Ω P-Channel VDS=-10V,R L=2.7 Ω ID=-1A,V GEN =-3V RG=2.7 Ω N P 5.2 9.5 nS

Product Information

STC4606 specifications and overview.

Summary

N&P Pair Enhancement Mode MOSFET

Description

N&P Pair Enhancement Mode MOSFET

Source title STC4606 Datasheet(PDF) - Stanson Technology

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