STC4516 STANSON | Alldatasheet
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Technical content
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
DESCRIPTION
STC4516 is the complementary enhancement mo de power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE P Channel z -30V/-7.2A, RDS(ON) = 22m-ohm (Typ.) @VGS =-10V z -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel z 30V/8.5A, R DS(ON) = 10m-ohm @VGS =10V z 30V/7.8A, RDS(ON) = 16m-ohm @VGS =4.5V z Super high density cell design for extremely low R DS(ON) z SOP-8 package design SOP-8 Top View 8 7 6 5 D1 D1 D2 D2
ORDERING INFORMATION
N-Channel MOSFET P-Channel MOSFET Y: Year Code A: Process Code Part Number Package Part Marking STC4516S8RG SOP-8 STC4516 STC4516S8TG SOP-8 STC4516 ※ Process Code : A ~ Z ; a ~ z ※ STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY http://www.stansontech.com STC4516 2008 V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) P-Channel Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS +/-20 V Continuous Drain Current T A=25℃ TA=70℃ ID -7.2 -5.6 A Pulsed Drain Current IDM -20 A Continuous Source Current (Diode Conduction) IS -2.3 A Power Dissipation T A=25℃ TA=70℃ PD 2.8 1.8 W Operation Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 /W℃ N-Channel Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS +/-20 V Continuous Drain Current TA=25℃ TA=70℃ ID 8.5 7.5 A Pulsed Drain Current IDM 20 A Continuous Source Current (Diode Conduction) IS 2.3 A Power Dissipation T A=25℃ TA=100℃ PD 2.5 1.6 W Operation Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 /W℃
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY http://www.stansontech.com STC4516 2008 V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )℃ P-Channel Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS=0V,ID=-250uA -30 V Gate Threshold Voltage VGS(th) V DS=VGS,ID=-250uA -1.0 -3.0 V Gate Leakage Current IGSS V DS=0V,VGS=+20V +100 nA VDS=-30V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS VDS=-30V,VGS=0V TJ=55℃ uA On-State Drain Current ID(on) V DS≥-5V,VGS=-10V -40 A Drain-source On-Resistance RDS(on) V GS=-10V,ID=-7.2A VGS=-4.5V,ID=-5.6A 0.022 0.030 Ω Forward Transconductance gfs VDS=-10V,ID=-7.2A 24 S Diode Forward Voltage VSD I S=-2.3A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 16 Gate-Source Charge Qgs 23 Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID=-7.2A 4.5 nC Input Capacitance Ciss 1650 Output Capacitance Coss 350 Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V f=1MHz 235 pF 16 30 Turn-On Time Td(on) tr 17 30 65 110 Turn-Off Time Td(off) tf VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 35 80 nS
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY http://www.stansontech.com STC4516 2008 V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )℃ -N-Channel Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) V DS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current IGSS V DS=0V,VGS=+20V +100 nA VDS=24V,VGS=0V 1 Zero Gate Voltage Drain Current I DSS VDS=24V,VGS=0V TJ=55℃ uA On-State Drain Current ID(on) V DS 5V,V≧ GS=10V 25 A Drain-source On-Resistance RDS(on) V GS=10V,ID=8.5A VGS=4.5V,ID=7.8A 0.010 0.013 Ω Forward Transconductance gfs V DS=15V,ID=6.2A 13 S Diode Forward Voltage VSD IS=-2.3A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg 16 24 Gate-Source Charge Qgs 4.2 Gate-Drain Charge Qgd VDS=15V,VGS=10V ID=2A 2.5 nC Input Capacitance Ciss 1350 Output Capacitance Coss 258 Reverse Transfer Capacitance Crss VDS=15V,VGS=0V f=1MHz 150 pF 15 20 Turn-On Time Td(on) tr 6 16 20 40 Turn-Off Time Td(off) tf VDD=15V,RL=15Ω ID=5.0A,VGEN=10V RG=1Ω 12 20 nS
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY http://www.stansontech.com TYPICAL CHARACHTERISTICS (N MOS) STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY http://www.stansontech.com TYPICAL CHARACHTERISTICS (N MOS) STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY http://www.stansontech.com TYPICAL CHARACHTERISTICS (P MOS) STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY http://www.stansontech.com TYPICAL CHARACHTERISTICS (P MOS) STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY http://www.stansontech.com SOP-8 PACKAGE OUTLINE STC4516 2008 V1