STC1015 SUNTAC | Alldatasheet
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A b s o l u t e m a x i m u m r a t i n g s (Ta=25°° °°C) Characteristic Symbol Ratings Unit Collector-Base voltage V CBO -60 V Collector-Emitter voltage V CEO -50 V Emitter-Base voltage V EBO -5 V Collector current I C -150 mA Collector dissipation P C 625 mW Junction temperature T j 150 °C Storage temperature T stg -55~150 °C E l e c t r i c a l C h a r a c t e r i s t i c s (Ta=25°° °°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BV CBO IC=-50µA, IE=0 -60 - - V Collector-Emitter breakdown voltage BV CEO IC=-1mA, IB=0 -50 - - V Emitter-Base breakdown voltage BV EBO IE=-50µA, IC=0 -5 - - V Collector cut-off current I CBO VCB=-50V, IE=0 - - -0.1 µA Emitter cut-off current I EBO VEB=-5V, IC=0 - - -0.1 µA DC current gain h FE * VCE=-6V, IC=-2mA 70 - 700 - Collector-Emitter saturation voltage V CE(sat) IC=-100mA, IB=-10mA - - -0.3 V Transition frequency f T VCE=-10V, IC=-1mA 80 - - MHz Collector output capacitance C ob VCB=-10V, IE=0, f=1MHz - 4 7 pF Noise figure NF VCE=-6V, IC=-0.1mA f=1KHz, Rg=10K1 -- 1 0 d B *: hFE rank / A : 70~140, B : 120~240, C : 200~400, D : 300~700.
Electrical Characteristic Curves Fig. 3 IC-VC E Fig. 4 h FE-IC Fig. 5 VCE(sat)-IC Fig. 2 I C-VBE Fig. 1 P C-Ta