STB60N03-TR VBSEMI | Alldatasheet
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N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
- TrenchFET® power MOSFET
- Package wi th low thermal resistance
- 100 % Rg and UIS tested Notes a. Pack age limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) 30 RDS(on) () at VGS = 10 V 0.0075 RDS(on) () at VGS = 4.5 V 0.0095 ID (A) 70 Configuration Single Package TO-220AB/ TO-263 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, u nless otherwise noted) PARAMETER SY MBOL LIMIT UNIT Dr ain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a ID A TC = 125 °C 50 Continuous Source Current (Diode Conduction) a IS 70 Pulsed Drai n Current b IDM 250 Single Puls e Avalanche Current L = 0.1 mH IAS 33 Single Pulse A valanche Energy EAS 54 mJ Maximum Powe r Dissipation b TC = 25 °C PD W TC = 125 °C 23 Operating Junction and S torage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE R ATINGS PARAMETER SYMBOL LIMIT UNI T Junction-to-Ambient PCB Mount c RthJA 50 °C/W Junction-to-Case (Drain) RthJC 2.1 TO-263 SDG Top View T O-220AB Top View GD S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
a. Puls e te st; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those li sted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, u nless otherwise noted) PARAMETER SYMBOL TE ST CONDITIONS MIN. TYP. MAX. UNIT Static Drai n-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - - V Gate-Source Thre shold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 30 V - - 1 μA VGS = 0 V V DS = 30 V, TJ = 125 °C - - 5 VGS = 0 V V DS = 30 V, TJ = 175 °C - - 1 On-State Drain Current a ID(on) V GS = 10 V VDS 5 V 70 - - A Drain-Source On-State Resistance a R DS(on) VGS = 10 V ID = 20 A - 0.006 0.0075 VGS = 10 V I D = 20 A, TJ = 125 °C - - 0.0094 VGS = 10 V I D = 20 A, TJ = 175 °C - - 0.0115 VGS = 4.5 V ID = 15 A - 0.008 0.0095 Forward Tr ansconductance b gfs VDS = 15 V, ID = 15 A - 100 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 1850 2200 pF Output Capacitance Coss Revers e Transfer Capacitance Crss Total Gate Charge c Qg VGS = 10 V V DS = 20 V, ID = 50 A -4 6 7 5 nC Gate- Source Charge c Qgs -1 0- Gate-Drain Charge c Qgd -8 - Gate Resistan ce Rg f = 1 MHz 1 .3 2.8 4.5 Turn-On Delay Time c td(on) VDD = 20 V, RL = 0.4 ID 50 A, VGEN = 10 V, Rg = 1 -9 1 5 nsRise Time c tr -1 9 3 0 Turn-Off Delay Time c td(off) -2 6 4 0 Fall Time c tf -1 0 1 5 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM -- 2 0 0 A Forwa rd Voltage VSD IF = 30 A, VGS = 0 V - 0.87 1.5 V - 260 400 - 95 200 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
ACTERISTICS (TA = 25 °C, unless o therwise noted) Output Characteristics Transconduc tance Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 100 150 200 250 0 4 8 12 16 20 2nd line ID - Drain Current (A) VDS - Drain-to-Source V oltage (V) 2nd line VGS = 10 V thru 6 V VGS = 3 V VGS = 4 V VGS = 5 V 100 1000 10000 120 200 0 1 02 03 04 05 0 Axis Title 1st line 2nd line 2nd line gfs - Transconductance (S) ID - Drain Cur rent (A) 2nd line TC = 25 °C TC =- 5 5 ° C TC = 125 °C 100 1000 10000 500 1000 1500 2000 2500 0 6 12 18 24 30 Axis Title 1st line 2nd line 2nd line C - Capacitance (pF) VDS - Drain-to-Source Vol tage (V) 2nd line Crss Coss Ciss 100 1000 10000 100 02468 1 0 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) VGS - Gate-to-Source Volt age (V) 2nd line TC = 25 °C TC =- 5 5 ° C TC = 125 °C 100 1000 10000 0.00 0.002 0.004 0.006 0.008 0.010 0 2 04 06 08 0 1 0 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID - Drain Cur rent (A) 2nd line VGS = 4.5 V VGS = 10 V 100 1000 10000 0 1 02 03 04 05 0 Axis Title 1st line 2nd line 2nd line VGS - Gate-to-Source Volt age (V) Qg - Total Gate Charge (nC) 2nd line ID = 50 A VDS = 20 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
ACTERISTICS (TA = 25 °C, unless o therwise noted) On-Resistance vs . Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature 100 1000 10000 0.5 1.3 1.7 2.1 2.5 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normaliz ed) TJ - Junction Temp erature (°C) 2nd line ID = 30 A VGS = 10 V VGS = 4.5 V 100 1000 10000 0.01 0.03 0.04 0.05 02468 1 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Volt age (V) 2nd line TJ = 25 °C TJ = 150 °C 100 1000 10000 0.00 0.01 0.1 100 Axis Title 1st line 2nd line 2nd line IS - Source Current (A) VSD - Source-to-Drain Voltage (V 2nd line TJ = 150 °C TJ = 25 °C 100 1000 10000 -1.4 -0.6 -0.2 0.2 0.6 -50 -25 0 25 50 75 100 125 150 175 Axis Title 1st line 2nd line 2nd line VGS(th) Variance (V) TJ - Temperature (°C) 2nd line ID = 5 mA ID = 250 μA 100 1000 10000 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 Axis Title 1st line 2nd line 2nd line VDS - Drain-to-Source Volt age (V) TJ - Junction Temperature (°C 2nd line ID = 1 mA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, un less otherwise noted) Safe Operati ng Area Normalized Thermal Transient Impedance, Junction-to-Ambient 100 1000 10000 0.01 100 1000 0.01 0.1 1 10 100 1000 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) VDS - Drain-to-Source Vol tage (V) (1) VGS > minimum VGS at which RDS(on) is specified IDM limited Limited by RDS(on) (1) TC = 25 °C Single pulse BVDSS lim ited 100 ms, 1 s, 10 s, DC 10 ms 1 ms 100 μs ID limited 100 1000 10000 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Axis Title 1st line 2nd line Normalized E ffective Transient Thermal Impedance Square Wave Pu lse Duration (s) 2nd line 0.1 0.05 0.02 Single pu lse Duty Cycle = 0.5 0.2 PDM t2 t1 Notes: E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, un less otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Case Note
- The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 100 1000 10000 0.01 0.0001 0.001 0.01 0.1 1 10 Axis Title 1st line 2nd line Normalized E ffective Transient Thermal Impedance Square Wave Pu lse Duration (s) 2nd line 0.1 0.05 0.02 Single pu lse Duty Cycle = 0.5 0.2 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
- M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
- Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 1 3 D B B E H BA Detail A A A c A 2 x e 2 x b2 2 x b
0.010 A BMM
± 0.004 BM Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C Scale: none Lead tip (Datum A)
2 C C
E B H Seating plane Gauge plane 0° to 8° Detail “A” Rotated 90° CW scale 8:1 L3 A1L4L MILLIMETERS INCHES MILLIMETE RS INCHES ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.635 (16.129) Recommended Minimum Pads Dimensions in Inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com
All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STB60N03-TR A ll data sheet.com