ST75N75 STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 75.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1
DESCRIPTION
ST75N75 is used trench technology to provide excell ent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L PIN CONFI MARKING FEATURE /circle6 75V/40.0A, R DS(ON) = 8mΩ (Typ.) @V GS = 10V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onpresistance and maximum DC current capability /circle6 TOp220 package design
N Channel Enhancement Mode MOSFET 75.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainpSource Voltage VDSS 75 V GatepSource Voltage VGSS ±20 V Continuous Drain Current (TJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 93.0 75.0 A Pulsed Drain Current IDM 370 A Avalanche Current IAS 7 0 A Power Dissipation TA=25 ℃ PD 200 W Operation Junction Temperature TJ 175 ℃ Storgae Temperature Range TSTG p55/175 ℃ Thermal ResistancepJunction to Ambient RθJA 0.75 ℃/W
N Channel Enhancement Mode MOSFET 75.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain pSource Breakdown Voltage V(BR)DSS V GS =0V,ID=250uA 75 V Gate Threshold Voltage VGS(th) V DS =V GS ,ID=250uA 2.0 4.0 V Gate Leakage Current I GSS V DS =0V,V GS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS V DS =48V,V GS =0V 1 uA Drainpsource Onp Resistance R DS(on) VGS =10V,I D=40A mΩ Diode Forward Voltage V SD I S=1.0A,V GS =0V 1.2 V Dynamic Total Gate Charge Q g VDS =4.5V,V DS =70V ID≡75A nC GatepSource Charge Q gs 29 GatepDrain Charge Q gd 31 Input Capacitance Ciss VDS =20V,VGS=0V F=1MHz 4780 pF Output Capacit ance Coss 540 Reverse TransferCapacitance Crss 180 TurnpOn Time td(on) tr VDD =30V,R L= 15Ω VDS=10V,R G=1Ω nS TurnpOff Time td(off) tf 150
N Channel Enhancement Mode MOSFET 75.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 75.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 75.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1 TO220-3L PACKAGE OUTLINE