ST7400 STANSON | Alldatasheet

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N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com ST7400 2005. V1

DESCRIPTION

ST7400 is the NsChannel logic enhancement mode powe r field effect transistor which is produced using high cell density, DMOS trench te chnology. This high density process is especially tailored to minimize onsstate resistance. These devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low insline power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 (SC-70) 1.Gate 2.Source 3.Drain PART MARKING SOT-323 Y: Year Code A: Process Code FEATURE /circle6 30V/2.8A, R DS(ON) = 77mΩ GS =10V /circle6 30V/2.5A, R DS(ON) = 85mΩ @V GS = 4.5V /circle6 30V/1.5A, R DS(ON) = 170mΩ @V GS = 2.5V /circle6 Super high density cell design for Extremely low R DS(ON) /circle6 Exceptional onsresistance and maximum DC current capability /circle6 SOTs323 (SCs70) package design 1 2 D G S 1 2 00YW

N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY http://www.stansontech.com ST7400 2005. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainsSource Voltage V DSS 30 V GatesSource Voltage VGSS ±12 V Continuous Drain CurrentTJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 2.8 2.3 A Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) I S 1.25 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 0.33 0.21 W Operation Junction Temperature T J 150 ℃ Storage Temperature Range T STG s55/150 ℃ Thermal ResistancesJunction to Ambient RθJA 100 ℃/W

N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY http://www.stansontech.com ST7400 2005. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static DrainsSource Breakdown Voltage V (BR)DSS VGS =0V,I D=250uA 30 V Gate Threshold Voltage V GS(th) V DS =V GS ,I D=250uA 0.8 1.6 V Gate Leakage Current I GSS VDS =0V,V GS =±12V ±100 nA VDS =24V,V GS =0V 1 Zero Gate Voltage Drain Current I DSS VDS =24V,V GS =0V TJ=85℃ 5 uA OnsState Drain Current I D(on) VDS ≦s5V,V GS =s4.5V 4.0 A Drainssource OnsResistance R DS(on) VGS =10V,I D=2.8A VGS =4.5V,I D=2.3A VGS =2.5V,I D=1.5A 110 mΩ Forward Transconductance g fs V DS =5V,I D=4.0V 4 S Diode Forward Voltage V SD I S=1.0A,V GS =0V 0.8 1.2 V Dynamic Total Gate Charge Q g 4.2 GatesSource Charge Q gs 0.6 GatesDrain Charge Q gd VDS =15V VGS =4.5V IDs2.0A 1.5 nC Input Capacitance C iss 380 Output Capacitance C oss 55 Reverse Transfer Capacitance C rss VDS =15V VGS =0V F=1MH z 40 pF

2.5 TurnsOn Time td(on)

tr 2.5 TurnsOff Time td(off) tf VDS =15V ID=1A RL=15 Ω RG=3Ω VGEN =10V 5 nS

N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY http://www.stansontech.com ST7400 2005. V1 TYPICAL CHARACTERICTICS

N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY http://www.stansontech.com ST7400 2005. V1 YPICAL CHARACTERICTICS

N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY http://www.stansontech.com ST7400 2005. V1 YPICAL CHARACTERICTICS

N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY http://www.stansontech.com ST7400 2005. V1 SOT-323 PACKAGE OUTLINE

N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY http://www.stansontech.com ST7400 2005. V1