ST6006 STANSON | Alldatasheet
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Technical content
N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A
DESCRIPTION
The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching a pplications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safetv margin against unexpected voltage transients. PIN CONFIGURATION TO-220-3L ST6006 TO-263-2L ST6006S Page 1 STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
APPLICATIONS
z 20V/2.8A, RDS(ON) = 85m-ohm @VGS = 4.5V z 20V/2.4A, RDS(ON) = 115m-ohm @VGS = 2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design
N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A
ORDERING INFORMATION
Part Number Pack age Part Marking ST6006T220TG TO-220-3L ST6006D ST6006T220RG TO-263-2L ST6006 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS +/-20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID A Pulsed Drain Current I DM 120 A Continuous Source Current (Diode Conduction) I S 60 A Power Dissipation TA=25℃ TA=70℃ PD 120 3.7 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 40 62.5 ℃/W Page2 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10uA 60 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=50uA 1.0 3.0 V Gate Leakage Current I GSS V DS=0V,VGS=20V 100 nA VDS=60V,VGS=0V 1 VDS=20V,VGS=0V TJ=125℃ Zero Gate Voltage Drain Current I DSS VDS=60V,VGS=0V TJ=175℃ uA On-State Drain Current I D(on) V DS=5V,VGS=10V 60 A VGS=10V,ID=30A 12 16 VGS=10V,ID=30A TJ=125℃ VGS=10V,ID=30A TJ=175℃ 31 37 Drain-source On-Resistance RDS(on) VGS=5V,ID=30A 14 19 mΩ Forward Transconductance gfs VDS=15V,ID=30A 49 S Diode Forward Voltage V SD I F=60A,VGS=0V 1.6 V Dynamic Total Gate Charge Qg 39 60 Gate-Source Charge Qgs 12 Gate-Drain Charge Qgd VDS=30V,VGS=10V ID≡60A nC Input Capacitance Ciss 2000 Output Capacitance Coss 400 Reverse Transfer Capacitance Crss VDS=25V,VGS=0V F=1MHz 115 pF 12 25 Turn-On Time td(on) tr 36 60 34 60 Turn-Off Time td(off) tf VDD=10V,RL=5.5Ω ID=3.6A,VGEN=4.5V RG=6Ω 10 25 nS Page3
N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A TO-220-3L PACKAGE OUTLINE ST6006 Page4 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60 TO-263-2L PACKAGE OUTLINE ST6006S Page 5 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V60A TYPICAL CHARACTERISTICS Page 6
N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V60A TYPICAL CHARACTERISTICS Page 7
N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V60A TYPICAL CHARACTERISTICS Page 8