ST47P06D STANSON | Alldatasheet
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P Channel Enhancement Mode MOSFET 647.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2009, Stanson Corp. ST47P06D 2010. V1
DESCRIPTION
ST47P06D is the P6Channel logic enhancement mode po wer field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on6state resistance. These device is particularly suited for low voltage application, notebook computer power management and other battery circuits where high6side switching. PIN CONFIGURATION ABSOULTE MAXIMUM RATINGS (Ta = 25ɗ Unless otherwise noted ) Parameter Symb ol Typical Unit Drain6Source Voltage VDSS 660 V Gate6Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150ɗ) TA=25ɗ TA=80ɗ ID 647.0 633.0 A Pulsed Drain Current IDM 6180 A Power Dissipation TA=25ɗ PD 160 W Operation Junction Temperature TJ 655/150 ɗ Storgae Temperature Range TSTG 655/150 ɗ Thermal Resistance6Junction to Ambient RθJA 62 ɗ/W FEATURE /circle6 660V/624A, RDS(ON) = 22mΩ (Typ.) @VGS = 610V /circle6 660V/610A, RDS(ON) = 30mΩ @VGS = 64.5V /circle6 Super high density cell design for extremely low RDS(ON) /circle6 Exceptional on6resistance and maximum DC current capability /circle6 TO6220 package design
P Channel Enhancement Mode MOSFET 647.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST47P06D 2010. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25ɗ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain6Source Breakdown Voltage V(BR)DSS V GS=0V,ID=6250mA 660 V Gate Threshold Voltage VGS(th) V DS=VGS,ID=6250uA 61.0 63.0 V Gate Leakage Current I GSS V DS=0V,VGS=±20V ± 100 nA Zero Gate Voltage Drain Current I DSS VDS=660V,VGS=0V 61 uA VDS=648V,VGS=0V TJ=125ɗ 610 Drain6source On6 Resistance R DS(on) VGS=610V,ID=624A VGS=64.5V,ID=610A 41 mΩ Forward Transconductance gfs V DS=630V,ID=610A 21 S Diode Forward Voltage V SD I S=647A,VGS=0V 64.0 V Dynamic Total Gate Charge Q g VDS=648V RG=25Ω ID≡647A 85 112 nC Gate6Source Charge Q gs 1.6 Gate6Drain Charge Q gd 4.3 Input Capacitance Ciss VDS =625V VGS=0V F=1.0MHz 2800 3600 pF Output Capacitance Coss 1300 1700 Reverse TransferCapacitance Crss 320 420 Turn6On Time td(on) tr VDD=630V RG= 25Ω ID=623.5A 52 110 nS 460 912 Turn6Off Time td(off) tf 100 210 195 400
P Channel Enhancement Mode MOSFET 647.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST47P06D 2010. V1 TYPICALCHARACTERICTICS
P Channel Enhancement Mode MOSFET 647.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST47P06D 2010. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET 647.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST47P06D 2010. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET 647.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST47P06D 2010. V1
P Channel Enhancement Mode MOSFET 647.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST47P06D 2010. V1
P Channel Enhancement Mode MOSFET 647.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST47P06D 2010. V1 TO-220-3L PACKAGE OUTLINE