ST36N10D STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1
DESCRIPTION
STN36N10D is used trench technology to provide exce llent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING Y: Year Code A: Week Code Q: Process Code FEATURE 100V/20.0A, R DS(ON) = 40mΩ (Typ.) @V GS = 10V 100V/20.0A, R DS(ON) = 42mΩ @V GS = 4.5V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 36.0 14.0 A Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 2.7 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 83 30 W Operation Junction Temperature TJ 175 ℃ Storgae Temperature Range TSTG -55/175 ℃ Thermal Resistance-Junction to Ambient RθJA 95 ℃/W
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS =0V,ID=250mA 100 V Gate Threshold Voltage V GS(th) V DS =V GS ,ID=250uA 1 3 V Zero Gate Voltage Drain Current I DSS V DS =80V,V GS =0V 10 nA VDS =0V,V GS =20V 100 Gate leakage Current I GSS VDS =0V,V GS =-20V -100 uA On-State Drain Current I D(on) VDS ≧5V,V GS =10V 36 A Drain-source On- Resistance R DS(on) VGS =10V,I D=20A VGS =4.5V,I D=20A 52 mΩ Forward Transconductance gfs V DS =5V,I D=20A 35 S Diode Forward Voltage V SD I S=1.0A,V GS =0V 1.2 V Dynamic Total Gate Charge Q g 61 80 Gate-Source Charge Q gs 12 Gate-Drain Charge Q gd VDS =10V,V DS=30V ID≡20A nC Input Capacitance Ciss 2580 Output Capacitance Coss 270 Reverse TransferCapacitance C rss VDS =20V,VGS=0V F=1MHz pF Turn-On Time td(on) tr 19
80 Turn-Off Time td(off)
VDD =20V,R L= 4Ω ID=5.0A,V GEN =10V RG=1Ω nS
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 TO-252-2L PACKAGE OUTLINE SOP-8P
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 TO-251 PACKAGE OUTLINE SOP-8P