ST36N06 STANSON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2009, Stanson Corp. ST36N06 2009. V1
DESCRIPTION
ST36N06 is used trench technology to provide excell ent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE /circle6 60V/20.0A, R DS(ON) = 30mΩ (Typ.) @V GS = 10V /circle6 60V/20.0A, R DS(ON) = 45mΩ @V GS = 4.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onpresistance and maximum DC current capability /circle6 TOp220 package design
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N06 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainpSource Voltage VDSS 60 V GatepSource Voltage VGSS ±20 V Continuous Drain Current (TJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 36.0 26.0 A Pulsed Drain Current IDM 60 A Avalanche Current IAS 7 0 A Power Dissipation TA=25 ℃ PD 62.5 W Operation Junction Temperature TJ 175 ℃ Storgae Temperature Range TSTG p55/175 ℃ Thermal ResistancepJunction to Ambient RθJA 62 ℃/W
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N06 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain pSource Breakdown Voltage V(BR)DSS V GS =0V,ID=250uA 60 V Gate Threshold Voltage VGS(th) V DS =V GS ,ID=250uA 1 3 V Gate Leakage Current I GSS V DS =0V,V GS =±20V 100 nA Zero Gate Voltage Drain Current I DSS VDS =48V,V GS =0V 1 uA VDS =48V,V GS =0V TJ=55℃ 5 On pState Drain Current ID(on) VDS ≧5V,V GS =10V 60 A Drainpsource Onp Resistance R DS(on) VGS =10V,I D=20A VGS =4.5V,I D=20A 55 mΩ Forward Transconductance gfs V DS =5V,I D=20A 65 S Diode Forward Voltage V SD I S=1.0A,V GS =0V 0.7 1.0 V Dynamic Total Gate Charge Q g VDS =10V,V DS =30V ID≡20A nC GatepSource Charge Q gs 7 GatepDrain Charge Q gd 9 Input Capacitance Ciss VDS =20V,VGS=0V F=1MHz 1080 pF Output Capacitance Coss 160 Reverse TransferCapacitance Crss 58 TurnpOn Time td(on) tr VDD =20V,R L= 4Ω ID=5.0A,V GEN =10V RG=1Ω nS TurnpOff Time td(off) tf
Copyright © 2009, Stanson Corp. Figure 1. Safe operating area Figure 3. Output chatacterisitcs Figure 2. Thermal impedance Figure 4. Transfer characteristics
Copyright © 2009, Stanson Corp. Figure 5. Transconductance Figure 7. Gate charge vs. Figure 6. Staic drain-source on resstance Figure 8. Capacitance variations
Copyright © 2009, Stanson Corp. Figure 9. Normalized gate threshold Figure 11. Source-drain diode Figure 10. Normalized on resistance vs. Figure 12 Normalized BVDSS vs.
Copyright © 2009, Stanson Corp. Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load switching and
Copyright © 2009, Stanson Corp. Figure 16. Unclamped Inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. ST36N06 2009. V1 TO220-3L PACKAGE OUTLINE