ST3414 STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com ST3414 2006. V1
DESCRIPTION
ST3414 is the N-Channel logic enhancement mo de power field effect transistor which is produced using high cell density, DM OS trench technology.This high density process is especially tailored to minimize on-state resistance .These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number Package Part Marking ST3414S23RG SOT-23 14YA ※ Week Code : A ~ Z ; a ~ z ※ ST3414S23RG : S23 : SOT23-3L R : Tape Reel ; G : Pb – Free FEATURE z 20V/4.2A, R DS(ON) = 40mΩ ( Typ.) @VGS = 4.5V z 20V/3.4A, RDS(ON) = 55 mΩ @VGS = 2.5V z 20V/2.8A, RDS(ON) = 75 mΩ @VGS = 1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 1 2 D G S 1 2 14YA
N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY www.stansontech.com ST3414 2006. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 4.0 3.2 A Pulsed Drain Current I DM 30 A Continuous Source Current (Diode Conduction) I S 1.6 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature T J -55/150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 125 ℃/W
N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY www.stansontech.com ST3414 2006. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA 20 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=250uA 0.40 1.0 V Gate Leakage Current I GSS VDS=0V,VGS=±12V ±100 nA VDS=20V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V TJ=55℃ 5 uA On-State Drain Current I D(on) VDS≧5V,VGS=4.5V 6 A Drain-source On-Resistance R DS(on) VGS=4.5V,ID=4.2A VGS=2.5V,ID=3.4A VGS=1.8V,ID=2.8A 0.040 0.055 0.075 Ω Forward Transconductance g fs V DS=5V,ID=3.6V 10 S Diode Forward Voltage V SD I S=1.6A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Q g 4.8 8 Gate-Source Charge Q gs 1.0 Gate-Drain Charge Q gd VDS=10V VGS=4.5V ID=2.8A 1.0 nC Input Capacitance C iss 485 Output Capacitance C oss 85 Reverse Transfer Capacitance C rss VDS=6V VGS=0V f=1MHz 40 pF 8 14 Turn-On Time td(on) tr 12 18 30 35 Turn-Off Time td(off) tf VDD=6V RL=6Ω ID=1.0A VGEN=4.5V RG=6Ω 12 16 nS
N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY www.stansontech.com ST3414 2006. V1 TYPICAL CHARACTERICTICS (25℃ Unless noted)
N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY www.stansontech.com ST3414 2006. V1 TYPICAL CHARACTERICTICS (25 Unless noted℃ )
N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY www.stansontech.com ST3414 2006. V1 SOT-23-3L PACKAGE OUTLINE