ST3413A STANSON | Alldatasheet
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P Channel Enhancement Mode MOSFET s3.5A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com ST3413A 2006 V1
DESCRIPTION
ST3413A is the PsChannel logic enhancement mode pow er field effect transistor which is produced using high cell density, DMOS trench techn ology. This high density process is especially tailored to minimize onsstate resistance . These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low insline power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Week Code FEATURE /circle6 - 20V/s3.4A, R DS(ON) = 70mΩ (Typ.) @V GS = s4.5V /circle6 s20V/s2.4A, R DS(ON) = 80mΩ @V GS = s2.5V /circle6 s20V/s1.7A, R DS(ON) = 125mΩ @V GS = s1.8V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onsresistance and maximum DC current capability /circle6 SOTs23 package design 1 2 D G S 1 2 13YA
P Channel Enhancement Mode MOSFET s3.5A STANSON TECHNOLOGY www.stansontech.com ST3413A 2006 V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainsSource Voltage VDSS s20 V GatesSource Voltage VGSS ±8 V Continuous Drain Current (TJ=150 ℃) TA=25 ℃ TA=70 ℃ ID s3.5 s2.8 A Pulsed Drain Current IDM s15 A Continuous Source Current (Diode Conduction) I S s1.4 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 1.25 0.8 W Operation Junction Temperature T J s55/150 ℃ Storage Temperature Range T STG s55/150 ℃ Thermal ResistancesJunction to Ambient RθJA 105 ℃/W
P Channel Enhancement Mode MOSFET s3.5A STANSON TECHNOLOGY www.stansontech.com ST3413A 2006 V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain sSource Breakdown Voltage V(BR)DSS VGS =0V,I D=s250uA s20 V Gate Threshold Voltage V GS(th) V DS =VGS,I D=s250uA s0.35 s0.8 V Gate Leakage Current I GSS VDS =0V,V GS =±8V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =s20V,V GS =0V s1 uA VDS =s20V,V GS =0V TJ=55 ℃ s5 OnsState Drain Current I D(on) VDS ≦s5V,V GS =s4.5V VDS ≦s5V,V GS =s2.5V s3 A Drainssource OnsResistance R DS(on) VGS =s1.8V,I D=s1.7A VGS =s2.5V,I D=s2.4A VGS =s4.5V,I D=s3.4A 0.125 0.080 0.070 Ω Forward Transconductance g fs V DS =s5V,I D=s2.8A 6 S Diode Forward Voltage V SD I S=s1.5A,V GS =0V s0.8 s1.2 V Dynamic Total Gate Charge Q g VDS =s6V VGS =s4.5V ID=s2.8A 4.8 8 nC GatesSource Charge Q gs 1.0 GatesDrain Charge Q gd 1.0 Input Capacitance Ciss VDS =s6V VGS =0V f=1MH z 485 pF Output Capacitance C oss 85 Reverse Transfer Capacitance Crss 40 TurnsOn Time td(on) tr VDD =s6V RL=6 Ω ID=s1A VGEN =s4.5V RG=6 Ω 10 16 nS 13 23 TurnsOff Time td(off) tf 18 25 15 20
P Channel Enhancement Mode MOSFET s3.5A STANSON TECHNOLOGY www.stansontech.com ST3413A 2006 V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)
P Channel Enhancement Mode MOSFET s3.5A STANSON TECHNOLOGY www.stansontech.com ST3413A 2006 V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)
P Channel Enhancement Mode MOSFET s3.5A STANSON TECHNOLOGY www.stansontech.com ST3413A 2006 V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)
P Channel Enhancement Mode MOSFET s3.5A STANSON TECHNOLOGY www.stansontech.com ST3413A 2006 V1 SOT-23 PACKAGE OUTLINE