ST3413 STANSON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
P Channel Enhancement Mode MOSFET ST3413 -3.4A
DESCRIPTION
The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and othe r batter powered circuits where high-side switching, and low in-line power loss are n eeded in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain 1A: Part Marking Y: Year Code A: Process Code Page 1 STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295 FEATURE z -20V/-3.4A, RDS(ON) = 95m-ohm @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 120m-ohm @VGS = -2.5V z -20V/-1.7A, RDS(ON) = 145m-ohm @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 1 2 D G S 1 2 13YA
P Channel Enhancement Mode MOSFET ST3413 -3.4A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS -20 V Gate-Source Voltage V GSS +/-12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -2.8 -2.0 A Pulsed Drain Current I DM -8 A Continuous Source Current (Diode Conduction) I S -1.4 A Power Dissipation TA=25℃ TA=70℃ PD 0.33 0.21 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 105 ℃/W Page 2 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enhancement Mode MOSFET ST3413 -3.4A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250uA -0.35 -0.8 V Gate Leakage Current I GSS V DS=0V,VGS=+/-12V 100 nA VDS=-20V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS VDS=-20V,VGS=0V TJ=55℃ uA On-State Drain Current I D(on) VDS≦-5V,VGS=-4.5V -6.0 A Drain-source On-Resistance RDS(on) VGS=-4.5V,ID=-2.8A VGS=-2.5V,ID=-2.0A VGS=-1.8V,ID=-1.5A 0.076 0.097 0.123 0.095 0.120 0.145 Ω Forward Transconductance gfs VDS=-5V,ID=-2.8V 6 S Diode Forward Voltage V SD I S=-1.6A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 4.8 8 Gate-Source Charge Qgs 1.0 Gate-Drain Charge Qgd VDS=-6V,VGS=-4.5V ID≡-2.8A 1.0 nC Input Capacitance Ciss 485 Output Capacitance Coss 85 Reverse Transfer Capacitance Crss VDS=-6V,VGS=0V F=1MHz pF 10 25 Turn-On Time td(on) tr 13 60 18 70 Turn-Off Time td(off) tf VDD=-6V,RL=6Ω ID=-1A,VGEN=-4.5V RG=6Ω 15 60 nS Page 3 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enhancement Mode MOSFET ST3413 -3.4A SOT-23-3L PACKAGE OUTLINE Page 4 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enhancement Mode MOSFET ST3413 -3.4A TYPICAL CHARACTERICTICS (25℃ Unless noted) Psge 5 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
TYPICAL CHARACTERICTICS (25℃ Unless noted) Page 6 P Channel Enhancement Mode MOSFET ST3413 -3.4A P Channel Enhancement Mode MOSFET ST3413 -3.4A P Channel Enhancement Mode MOSFET ST3413 -3.4A STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enhancement Mode MOSFET ST3413 -3.4A STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295