ST3407SRG STANSON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
P Channel Enhancement Mode MOSFET s3.6A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com ST3407SRG 2006. V1
DESCRIPTION
ST3407SRG is the PsChannel logic enhancement mode p ower field effect transistor which is produced using high cell density, DMOS tre nch technology. This high density process is especially tailored to minimize onsstate resistance. These devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low insline power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Process Code FEATURE /circle6 s30V/s4.0A, R DS(ON) = 54mΩ (Typ.) GS = s10V /circle6 s30V/s3.2A, R DS(ON) = 72mΩ @V GS = s4.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onsresistance and maximum DC current capability /circle6 SOTs23 package design 1 2 D G S 1 2 A7YA
P Channel Enhancement Mode MOSFET s3.6A STANSON TECHNOLOGY www.stansontech.com ST3407SRG 2006. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainsSource Voltage V DSS s30 V GatesSource Voltage VGSS ±20 V Continuous Drain CurrentTJ=150 ℃) TA=25 ℃ TA=70 ℃ ID s3.6 s3.0 A Pulsed Drain Current IDM s15 A Continuous Source Current (Diode Conduction) I S s1.0 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 1.20 0.8 W Operation Junction Temperature T J 150 ℃ Storage Temperature Range T STG s55/150 ℃ Thermal ResistancesJunction to Ambient RθJA 120 ℃/W
P Channel Enhancement Mode MOSFET s3.6A STANSON TECHNOLOGY www.stansontech.com ST3407SRG 2006. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static DrainsSource Breakdown Voltage V (BR)DSS VGS =0V,I D=s250 uA s30 V Gate Threshold Voltage V GS(th) V DS =V GS ,I D=s250uA s1.0 s3.0 V Gate Leakage Current I GSS VDS =0V,V GS =±20V ±100 Na Zero Gate Voltage Drain Current I DSS VDS =s24V,V GS =0V s1 UA VDS =s24V,V GS =0V TJ=55 ℃ s9.5 Drainssource OnsResistance R DS(on) VGS =s10.0V,I D=s4.0A VGS =s4.5V,I D=s3.2A 72 mΩ Forward Transconductance g fs V DS =s5.0V,I D=s4.0A 10 S Diode Forward Voltage V SD I S=s1.0A,V GS =0V s0.8 s1.2 V Dynamic Total Gate Charge Q g VDS =s15V VGS =s10V ID≡s4.0A 14 21 nC GatesSource Charge Q gs 1.9 GatesDrain Charge Q gd 3.7 Input Capacitance C iss VDS =s15V VGS =0V F=1MH z 540 pF Output Capacitance C oss 131 Reverse Transfer Capacitance C rss 105 TurnsOn Time td(on) tr VDD =s15V RL=15 Ω ID=s1.0A VGEN =s10V RG=6 Ω 10 16 nS 16 25 TurnsOff Time td(off) tf 32 50 21 32
P Channel Enhancement Mode MOSFET s3.6A STANSON TECHNOLOGY www.stansontech.com ST3407SRG 2006. V1 TYPICAL CHARACTERICTICS (25 ℃ unless otherwise noted)
P Channel Enhancement Mode MOSFET s3.6A STANSON TECHNOLOGY www.stansontech.com ST3407SRG 2006. V1 TYPICAL CHARACTERICTICS (25 ℃ unless otherwise noted)
P Channel Enhancement Mode MOSFET s3.6A STANSON TECHNOLOGY www.stansontech.com ST3407SRG 2006. V1 SOT-23 PACKAGE OUTLINE