ST3406SRG STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com ST3406SRG 2006. V1
DESCRIPTION
ST3406SRG is the NsChannel logic enhancement mode p ower field effect transistor which is produced using high cell density, DMOS tre nch technology. This high density process is especially tailored to minimize onsstate resistance. These devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low insline power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Week Code FEATURE /circle6 30V/5.4A, R DS(ON) = 26mΩ(Typ.) GS = 10V /circle6 30V/4.6A, R DS(ON) = 38mΩ @V GS = 4.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onsresistance and maximum DC current capability /circle6 SOTs23 package design 1 2 D G S 1 2 A6YA
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com ST3406SRG 2006. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainsSource Voltage V DSS 30 V GatesSource Voltage VGSS ±20 V Continuous Drain CurrentTJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 5.4 3.2 A Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conduction) I S 1.7 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 2.0 1.3 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG s55/150 ℃ Thermal ResistancesJunction to Ambient RθJA 90 ℃/W
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com ST3406SRG 2006. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static DrainsSource Breakdown Voltage V (BR)DSS VGS =0V,I D=s250uA 30 V Gate Threshold Voltage V GS(th) V DS =VGS,I D=250uA 1.0 3.0 V Gate Leakage Current I GSS VDS =0V,V GS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =24V,V GS =0V 1 uA VDS =24V,V GS =0V TJ=55 ℃ 10 Drainssource OnsResistance R DS(on) VGS =10V,I D=4.0A VGS =4.5V,I D=3.6 A 38 mΩ Forward Transconductance g fs V DS =4.5V,I D=5.4A 12 S Diode Forward Voltage V SD I S=1.7A,V GS =0V 0.8 1.2 V Dynamic Total Gate Charge Q g VDS =15V VGS =10V ID≡6.7A 10 18 nC GatesSource Charge Q gs 1.6 GatesDrain Charge Q gd 3.1 Input Capacitance C iss VDS =15V VGS =0V F=1MH z 450 pF Output Capacitance C oss 240 Reverse Transfer Capacitance Crss 38 TurnsOn Time td(on) tr VDD =15V RL=15 Ω ID=1.0A VGEN =10V RG=6 Ω 7 15 nS 10 20 TurnsOff Time td(off) tf 20 40 11 20
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com ST3406SRG 2006. V1 TYPICAL CHARACTERICTICS (25 ℃ unless otherwise noted)
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com ST3406SRG 2006. V1 TYPICAL CHARACTERICTICS (25 ℃ unless otherwise noted)
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com ST3406SRG 2006. V1 SOT-23 PACKAGE OUTLINE