ST3406 STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
DESCRIPTION
ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23-3L z 30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V z 30V/4.6A, RDS(ON) = 36mΩ @VGS = 4.5V ST3406 2006. V1 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number Package Part Marking ST3406S23RG SOT-23-3L A6YA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G S A6YA
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com ST3406 2006. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 5.4 3.2 A Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conduction) IS 1.7 A Power Dissipation TA=25℃ TA=70℃ PD 2.0 1.3 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 ℃/W
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com ST3406 2006. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=-250uA 30 V Gate Threshold Voltage VGS(th) V DS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=24V,VGS=0V 1 Zero Gate Voltage Drain Current I DSS VDS=24V,VGS=0V TJ=55℃ 10 uA On-State Drain Current ID(on) VDS≧5V,VGS=4.5V 10 A Drain-source On-Resistance RDS(on) VGS=10V,ID=4.0A VGS=4.5V,ID=3.6A 41 mΩ Forward Transconductance gfs V DS=4.5V,ID=5.4A 12 S Diode Forward Voltage VSD I S=1.7A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg 10 18 Gate-Source Charge Qgs 1.6 Gate-Drain Charge Qgd VDS=15V VGS=10V ID≣6.7A 3.1 nC Input Capacitance Ciss 450 Output Capacitance Coss 240 Reverse Transfer Capacitance Crss VDS=15V VGS=0V F=1MHz 38 pF 7 15 Turn-On Time td(on) tr 10 20 20 40 Turn-Off Time td(off) tf VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 11 20 nS
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com TYPICAL CHARACTERICTICS (25℃ unless otherwise noted) ST3406 2006. V1
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com TYPICAL CHARACTERICTICS (25℃ unless otherwise noted) ST3406 2006. V1
N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY http://www.stansontech.com SOT-23-3L PACKAGE OUTLINE ST3406 2006. V1