ST3403 STANSON | Alldatasheet
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Technical content
P Channel Enchancement Mode MOSFET ST3403 -3.5A
DESCRIPTION
The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and othe r batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain Y: Year Code A: Process Code Page 1 STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295 FEATURE z -30V/-2.8A, RDS(ON) = 105m-ohm @VGS = -10V z -30V/-2.5A, RDS(ON) = 115m-ohm @VGS = -4.5V z -30V/-1.5A, RDS(ON) = 155m-ohm @VGS = -2.5V z -30V/-1.0A, RDS(ON) =255m-ohm z @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 1 2 D G S 1 2 A3YA
P Channel Enchancement Mode MOSFET ST3403 -3.5A ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GSS +/-12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -3.5 -2.8 A Pulsed Drain Current I DM -20 A Continuous Source Current (Diode Conduction) I S -1.4 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.81 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 105 ℃/W Page 2 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enchancement Mode MOSFET ST3403 -3.5A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250uA -0.4 -1.0 V Gate Leakage Current I GSS VDS=0V,VGS=±12V ±100 nA VDS=-24V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS VDS=-24V,VGS=0V TJ=85℃ uA On-State Drain Current I D(on) V DS≧-5V,VGS=-4.5V -4 A Drain-source On-Resistance RDS(on) VGS=-10V,ID=-2.8A VGS=-4.5V,ID=-2.5A VGS=-2.5V,ID=-1.5A VGS=-1.8V,ID=-1.0A 0.09 0.100 0.140 0.200 0.105 0.115 0.155 0.255 Ω Forward Transconductance gfs VDS=-10V,ID=-2.8A 4 S Diode Forward Voltage V SD I S=-1.2A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 5.8 Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd VDS=-15V,VGS=-4.5V ID≡-2.0A 1.5 nC Input Capacitance Ciss 380 Output Capacitance Coss 55 Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V F=1MHz pF
6 Turn-On Time
td(on) tr 3.9
40 Turn-Off Time
td(off) tf VDD=-15V,RL=15Ω VGEN=-10V,RG=3Ω ID≡-1.0A 15 nS Page 3 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enchancement Mode MOSFET ST3403 -3.5A SOT-23-3L PACKAGE OUTLINE Page 4 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST3403 -3.5A TYPICAL CHARACTERISTICS Page 5 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enchancement Mode MOSFET ST3403 -3.5A TYPICAL CHARACTERISTICS Page 6 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST3403 -3.5A TYPICAL CHARACTERISTICS Page 7 STANSON TECHNOLOGY TEL: (650) 9389294 FAX: (650) 9389295