ST3402 STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com ST3402 2006. V1
DESCRIPTION
ST3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number Package Part Marking ST3402S23RG SOT-23-3L A2YA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST3402S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free FEATURE z 30V/2.8A, R DS(ON) = 58mΩ @VGS = 10V z 30V/2.3A, RDS(ON) = 65mΩ @VGS = 4.5V z 30V/1.5A, RDS(ON) = 105mΩ @VGS = 2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 1 2 D G S 1 2 A2YA
N Channel Enhancement Mode MOSFET STANSON TECHNOLOGY http://www.stansontech.com ST3402 2006. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GSS ±12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 4.0 2.8 A Pulsed Drain Current I DM 10 A Continuous Source Current (Diode Conduction) I S 1.25 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W
N Channel Enhancement Mode MOSFET STANSON TECHNOLOGY http://www.stansontech.com ST3402 2006. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA 30 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=250uA 0.8 1.6 V Gate Leakage Current I GSS VDS=0V,VGS=±12V ±100 nA VDS=24V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V TJ=55℃ 10 uA On-State Drain Current I D(on) VDS≧4.5V,VGS=4.5V 4 A Drain-source On-Resistance R DS(on) VGS=10V,ID=2.8A VGS=4.5V,ID=4.5A VGS=2.5V,ID=1.5A 105 mΩ Forward Transconductance g fs V DS=4.5V,ID=5.8A 12 S Diode Forward Voltage V SD I S=1.25A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Q g 4.2 6 Gate-Source Charge Q gs 0.6 Gate-Drain Charge Q gd VDS=15V VGS=4.5V ID≣2.0A 1.5 nC Input Capacitance C iss 350 Output Capacitance C oss 55 Reverse Transfer Capacitance C rss VDS=15V VGS=0V F=1MHz 41 pF 2.5 Turn-On Time td(on) tr 2.5 Turn-Off Time td(off) tf VDD=15V RL=10Ω ID=1.0A VGEN=10V RG=3Ω 4 nS
N Channel Enhancement Mode MOSFET STANSON TECHNOLOGY http://www.stansontech.com ST3402 2006. V1 TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)
N Channel Enhancement Mode MOSFET STANSON TECHNOLOGY http://www.stansontech.com ST3402 2006. V1 TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)
N Channel Enhancement Mode MOSFET STANSON TECHNOLOGY http://www.stansontech.com ST3402 2006. V1 SOT-23-3L PACKAGE OUTLINE