ST3401 STANSON | Alldatasheet

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P Channel Enhancement Mode MOSFET -4.0A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

DESCRIPTION

ST3401 is the P-Channel logic enhancement mo de power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other batte ry powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z - 30V/-4.0A, RDS(ON) = 45mΩ (Typ.) STP3401 2005. V1 @VGS = -10V z -30V/-3.2A, RDS(ON) = 50mΩ @VGS = -4.5V 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number Package Part Marking ST3401S23RG SOT-23-3L A1YA ※ Process Code : A ~ Z ; a ~ z ※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free z -30V/-1.2A, RDS(ON) = 60mΩ @VGS = -2.5V z Super high density cell design for Extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G S A1YA

P Channel Enhancement Mode MOSFET -4.0A STANSON TECHNOLOGY http://www.stansontech.com STP3401 2005. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID -4.0 -3.2 A Pulsed Drain Current IDM -15 A Continuous Source Current (Diode Conduction) IS -1.0 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 ℃/W

P Channel Enhancement Mode MOSFET -4.0A STANSON TECHNOLOGY http://www.stansontech.com STP3401 2005. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 V Gate Threshold Voltage VGS(th) V DS=VGS,ID=-250uA -0.4 -1.0 V Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA VDS=-24V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS VDS=-24V,VGS=0V TJ=55℃ -10 uA On-State Drain Current ID(on) VDS≦-5V,VGS=-4.5V -10 A Drain-source On-Resistance RDS(on) VGS=-10V,ID=-4.0A VGS=-4.5V,ID=-3.2A VGS=-2.5V,ID=-1.2A mΩ Forward Transconductance gfs V DS=-5V,ID=-4.0V 10 S Diode Forward Voltage VSD I S=-1.0A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 14 21 Gate-Source Charge Qgs 1.9 Gate-Drain Charge Qgd VDS=-15V VGS=-10V ID≣-4.0A 3.7 nC Input Capacitance Ciss 540 Output Capacitance Coss 131 Reverse Transfer Capacitance Crss VDS=-15V VGS=0V F=1MHz 105 pF 10 15 Turn-On Time td(on) tr 15 25 31 50 Turn-Off Time td(off) tf VDS=-15V VGS=-15V ID=-1A RL=6Ω RG=-10Ω 20 30 nS

P Channel Enhancement Mode MOSFET -4.0A STANSON TECHNOLOGY http://www.stansontech.com TYPICAL CHARACTERICTICS (25℃ Unless noted) STP3401 2005. V1

P Channel Enhancement Mode MOSFET -4.0A STANSON TECHNOLOGY http://www.stansontech.com TYPICAL CHARACTERICTICS (25℃ Unless noted) STP3401 2005. V1

P Channel Enhancement Mode MOSFET -4.0A STANSON TECHNOLOGY http://www.stansontech.com SOT-23-3L PACKAGE OUTLINE STP3401 2005. V1