ST3401M23RG STANSON | Alldatasheet

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P Channel Enhancement Mode MOSFET /4.0A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com STP3401M23RG 2005. V1

DESCRIPTION

ST3401M23RG is the P/Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS tren ch technology. This high density process is especially tailored to minimize on/state resistance. These devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low in/line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Process Code FEATURE /circle6 - 30V//4.0A, R DS(ON) = 53mΩ (Typ.) @V GS = /10V /circle6 /30V//3.2A, R DS(ON) = 60mΩ @V GS = /4.5V /circle6 Super high density cell design for Extremely low R DS(ON) /circle6 Exceptional on/resistance and maximum DC current capability /circle6 SOT/23/3L package design 1 2 D G S 1 2 A1YA

P Channel Enhancement Mode MOSFET /4.0A STANSON TECHNOLOGY http://www.stansontech.com STP3401M23RG 2005. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain/Source Voltage V DSS /30 V Gate/Source Voltage VGSS ±12 V Continuous Drain CurrentTJ=150 ℃) TA=25 ℃ TA=70 ℃ ID /4.0 /3.2 A Pulsed Drain Current IDM /15 A Continuous Source Current (Diode Conduction) I S /1.0 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 1.25 0.8 W Operation Junction Temperature T J 150 ℃ Storage Temperature Range T STG /55/150 ℃ Thermal Resistance/Junction to Ambient RθJA 120 ℃/W

P Channel Enhancement Mode MOSFET /4.0A STANSON TECHNOLOGY http://www.stansontech.com STP3401M23RG 2005. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain/Source Breakdown Voltage V (BR)DSS VGS =0V,I D=/250uA /30 V Gate Threshold Voltage V GS(th) V DS =V GS ,I D=/250uA /0.4 /1.0 V Gate Leakage Current I GSS VDS =0V,V GS =±12V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =/24V,V GS =0V /1 uA VDS =/24V,V GS =0V TJ=55 ℃ /10 On/State Drain Current I D(on) VDS ≦/5V,V GS =/4.5V /10 A Drain/source On/Resistance R DS(on) VGS =/10V,I D=/4.0A VGS =/4.5V,I D=/3.2A mΩ Forward Transconductance g fs V DS =/5V,I D=/4.0V 10 S Diode Forward Voltage V SD I S=/1.0A,V GS =0V /0.8 /1.2 V Dynamic Total Gate Charge Q g VDS =/15V VGS =/10V ID≡/4.0A 14 21 nC Gate/Source Charge Q gs 1.9 Gate/Drain Charge Q gd 3.7 Input Capacitance C iss VDS =/15V VGS =0V F=1MH z 540 pF Output Capacitance C oss 131 Reverse Transfer Capacitance C rss 105 Turn/On Time td(on) tr VDS =/15V VGS =/15V ID=/1A RL=6 Ω RG=/10 Ω 10 15 nS 15 25 Turn/Off Time td(off) tf 31 50 20 30

P Channel Enhancement Mode MOSFET /4.0A STANSON TECHNOLOGY http://www.stansontech.com STP3401M23RG 2005. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)

P Channel Enhancement Mode MOSFET /4.0A STANSON TECHNOLOGY http://www.stansontech.com STP3401M23RG 2005. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)

P Channel Enhancement Mode MOSFET /4.0A STANSON TECHNOLOGY http://www.stansontech.com STP3401M23RG 2005. V1 SOT-23-3L PACKAGE OUTLINE