ST3400SRG STANSON | Alldatasheet

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N Channel Enhancement Mode MOSFET 5.8A

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stnasontech.com STN3400SRG 2009. V1

DESCRIPTION

The ST3400SRG is the NGChannel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This highGdensity process is especially tailored to minimize onGstate resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching . PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Week Code FEATURE /circle6 30V/5.8A, R DS(ON) = 25mΩ (Typ.) GS = 10V /circle6 30V/4.8A, R DS(ON) = 30mΩ @V GS = 4.5V /circle6 30V/4.0A, R DS(ON) = 40mΩ @V GS = 2.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onGresistance and maximum DC current capability /circle6 SOTG23 package design 1 2 D G S 1 2 A0YA

N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com STN3400SRG 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainGSource Voltage V DSS 30 V GateGSource Voltage VGSS ±12 V Continuous Drain CurrentTJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 5.8 3.5 A Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conduction) I S 1.7 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 2.0 1.3 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG G55/150 ℃ Thermal ResistanceGJunction to Ambient RθJA 90 ℃/W

N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com STN3400SRG 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static DrainGSource Breakdown Voltage V (BR)DSS VGS =0V,I D=250uA 30 V Gate Threshold Voltage V GS(th) V DS =VGS,I D=250uA 0.5 1.5 V Gate Leakage Current I GSS VDS =0V,V GS =±12V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =24V,V GS =0V 1 uA VDS =24V,V GS =0V TJ=55 ℃ 10 DrainGsource OnGResistance R DS(on) VGS =10V,I D=5.8A VGS =4.5V,I D=4.8A VGS =2.5V,I D=4.0A mΩ Forward Transconductance g fs V DS =4.5V,I D=5.8A 12 S Diode Forward Voltage V SD I S=1.7A,V GS =0V 1.2 V Dynamic Total Gate Charge Q g VDS =15V VGS =10V ID≡6.7A 9.7 18 nC GateGSource Charge Q gs 1.6 GateGDrain Charge Q gd 3.1 Input Capacitance C iss VDS =15V VGS =0V F=1MH z 450 pF Output Capacitance C oss 240 Reverse Transfer Capacitance C rss 38 TurnGOn Time td(on) tr VDD =15V RL=15 Ω ID=1.0A VGEN =10V RG=6 Ω 7 15 nS 10 20 TurnGOff Time td(off) tf 20 40 11 20

N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com STN3400SRG 2009. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)

N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com STN3400SRG 2009. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)

N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com STN3400SRG 2009. V1 SOT-23 PACKAGE OUTLINE