ST3400 STANSON | Alldatasheet
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Technical content
N Channel Enhancement Mode MOSFET 5.8A
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
DESCRIPTION
The ST3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching FEATURE PIN CONFIGURATION SOT-23-3L z 30V/5.8A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V z 30V/4.8A, RDS(ON) = 33mΩ @VGS = 4.5V STN3400 2006. V1 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number Package Part Marking ST3400S23RG SOT-23-3L A0YA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST3400S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free z 30V/4.0A, RDS(ON) = 40mΩ @VGS = 2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G S 1 2 A0YA
N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com STN3400 2006. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 5.8 3.5 A Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conduction) IS 1.7 A Power Dissipation TA=25℃ TA=70℃ PD 2.0 1.3 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 ℃/W
N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com STN3400 2006. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) V DS=VGS,ID=250uA 0.8 1.6 V Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA VDS=24V,VGS=0V 1 Zero Gate Voltage Drain Current I DSS VDS=24V,VGS=0V TJ=55℃ 10 uA On-State Drain Current ID(on) VDS≧5V,VGS=4.5V 10 A Drain-source On-Resistance RDS(on) VGS=10V,ID=5.8A VGS=4.5V,ID=4.8A VGS=2.5V,ID=4.0A mΩ Forward Transconductance gfs V DS=4.5V,ID=5.8A 12 S Diode Forward Voltage VSD I S=1.7A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg 9.7 18 Gate-Source Charge Qgs 1.6 Gate-Drain Charge Qgd VDS=15V VGS=10V ID≣6.7A 3.1 nC Input Capacitance Ciss 450 Output Capacitance Coss 240 Reverse Transfer Capacitance Crss VDS=15V VGS=0V F=1MHz 38 pF 7 15 Turn-On Time td(on) tr 10 20 20 40 Turn-Off Time td(off) tf VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 11 20 nS
N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com TYPICAL CHARACTERICTICS (25℃ Unless noted) STN3400 2006. V1
N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com TYPICAL CHARACTERICTICS (25℃ Unless noted) STN3400 2006. V1
N Channel Enhancement Mode MOSFET 5.8A http://www.stnasontech.com SOT-23-3L PACKAGE OUTLINE STN3400 2006. V1