ST05N20 STANSON | Alldatasheet
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ST05N20 N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST05N20 2014. V1 DESCRIPTION ST05N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOT-223 0520 : Product Code A : Date Code FEATURE l200V/2.0A, RDS(ON) = 800m @VGS = 10V lSuper high density cell design for extremely low RDS(ON) lExceptional on-resistance and maximum DC current capability lSOT-223 package design
ST05N20 N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST05N20 2014. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=100℃ ID 2 0.8 A Pulsed Drain Current IDM 10 A Repetitive Avalanche Current EAS 4.2 mJ Power Dissipation TA=25℃ PD 1.78 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 75 ℃/W
ST05N20 N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST05N20 2014. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 200 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 3 4 5 V Gate Leakage Current IGSS VDS=0V,VGS=±30V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=160V,VGS=0V 1 uA Drain-source On-Resistance RDS(on) VGS=10V,ID=12A 750 800 mΩ Forward Transconductance gfs VDS=10V,ID=2A 3.6 S Diode Forward Voltage VSD IS=1A,VGS=0V 1 V Dynamic Total Gate Charge Qg VDS=160V,VGS=10V ID=1 A 9 nC Gate-Source Charge Qgs 4 Gate-Drain Charge Qgd 2 Input Capacitance Ciss VDS =25V,VGS=0V f=1MHz 260 500 pF Output Capacitance Coss 160 300 Reverse TransferCapacitance Crss 55 110 Turn-On Time td(on) tr VDS=100 VGEN=10V, ID=1A RG=25Ω 10 20 nS 35 70 Turn-Off Time td(off) tf 10 20 28 56
ST05N20 N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST05N20 2014. V1 TYPICAL CHATRCTERISTICS
ST05N20 N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST05N20 2014. V1 TYPICAL CHATRCTERISTICS
ST05N20 N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST05N20 2014. V1 PACKAGE OUTLINE SOT-223