ST04N20D STANSON | Alldatasheet

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ST04N20D N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST04N20D 2014. V1 DESCRIPTION ST04N20D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION TO-252 PART MARKING P:Perduce Code W:Wafer Code Y:Year Code A:Product Code FEATURE l200V/4.0A, RDS(ON) = 400m @VGS = 10V lSuper high density cell design for extremely low RDS(ON) lExceptional on-resistance and maximum DC current capability lTO-252 package design

ST04N20D N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST04N20D 2014. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=100℃ ID 4 1.2 A Pulsed Drain Current IDM 15 A Avalanche Current IAS 10 mJ Power Dissipation TA=25℃ PD 68 W Operation Junction Temperature TJ 70 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 60 ℃/W

ST04N20D N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST04N20D 2014. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 200 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 3 4.3 5 V Gate Leakage Current IGSS VDS=0V,VGS=±30V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V 1 uA Drain-source On-Resistance RDS(on) VGS=10V,ID=12A 375 400 mΩ Forward Transconductance gfs VDS=50V,ID=3A 3.8 S Diode Forward Voltage VSD IS=1A,VGS=0V 1 V Dynamic Total Gate Charge Qg VDS=160V,VGS=10V ID≡4 A 45 nC Gate-Source Charge Qgs 7.0 Gate-Drain Charge Qgd 23 Input Capacitance Ciss VDS =25,VGS=0V f=1MHz 800 pF Output Capacitance Coss 240 Reverse TransferCapacitance Crss 76 Turn-On Time td(on) tr VDS=100,RD=13Ω VGEN=10V, ID≡2 A RG=12.Ω 9.4 nS 23 Turn-Off Time td(off) tf 38.4 19.6

ST04N20D N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST04N20D 2014. V1 TYPICAL CHATRCTERISTICS

ST04N20D N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST04N20D 2014. V1 TYPICAL CHATRCTERISTICS

ST04N20D N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST04N20D 2014. V1 TYPICAL CHATRCTERISTICS

ST04N20D N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST04N20D 2014. V1 PACKAGE OUTLINE SOP-8P