ST002 STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 3.0A
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com ST1002 2013 . V1
DESCRIPTION
The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching . PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Produce Code FEATURE 100V/3.0A, R DS(ON) = 135mΩ @V GS = 10V 100V/2.5A, R DS(ON) = 140mΩ @V GS = 4.5V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 1 2 D G S 1 2 102YA
N Channel Enhancement Mode MOSFET 3.0A http://www.stnasontech.com ST1002 2013 . V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TJ=150 ℃ T A=25 ℃ TA=70 ℃ ID 5.0 3.0 A Pulsed Drain Current I DM 15 A Continuous Source Current (Diode Conduction) I S 1.9 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 2.0 1.2 W Operation Junction Temperature T J -55/150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 75 ℃/W
N Channel Enhancement Mode MOSFET 3.0A http://www.stnasontech.com ST1002 2013 . V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain -Source Breakdown Voltage V(BR)DSS VGS =0V,I D=250uA 100 V Gate Threshold Voltage V GS(th) V DS =VGS,I D=250uA 1 2.5 V Gate Leakage Current I GSS VDS =0V,V GS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =80V,V GS =0V 1 uA VDS =80V,V GS =0V TJ=55 ℃ 10 Drain-source On-Resistance R DS(on) VGS =10 V,I D=3.0 A VGS =4.5V,I D=2.0A 128 133 135 140 mΩ Diode Forward Voltage V SD I S=1.7A,V GS =0V 1.0 V Dynamic Total Gate Charge Q g VDS =50V VGS =10V ID≡2.0A nC Gate-Source Charge Q gs 7.2 Gate-Drain Charge Q gd 22 Input Capacitance Ciss VDS =30V VGS =0V F=1MH z 640 pF Output Capacitance C oss 160 Reverse Transfer Capacitance C rss 88 Turn-On Time td(on) tr VDD =30V RL=30 Ω ID=1.0A VGEN =10V RG=6 Ω 11 21 nS 10 19 Turn-Off Time td(off) tf 24 44 21 39
N Channel Enhancement Mode MOSFET 3.0A http://www.stnasontech.com ST1002 2013 . V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)
N Channel Enhancement Mode MOSFET 3.0A http://www.stnasontech.com ST1002 2013 . V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)
N Channel Enhancement Mode MOSFET 3.0A http://www.stnasontech.com ST1002 2013 . V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)
N Channel Enhancement Mode MOSFET 3.0A http://www.stnasontech.com ST1002 2013 . V1 SOT-23-3L PACKAGE OUTLINE