SSG4842N

SSG4842N VBSEMI | Alldatasheet

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Technical content

N-Channel 40-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21  TrenchFET ® Power MOSFET  100 % R g and UIS Tested

APPLICATIONS

 Notebook CPU C o re - High-Side Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0045 at VGS = 10 V 18 8 nC 0.0065 at VGS = 4.5 V 14.5 SO-8 SD SD SD GD 5 Top View N-Channel MOSFET G D S Notes: a. Based on T C = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless oth erwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 13.5 TA = 25 °C 12b, c TA = 70 °C 9.6b, c Pulsed Drain Current IDM 50 Continuous Source-Drain Diode Curren t TC = 25 °C IS 4.5 TA = 25 °C 2.2b, c Single Pulse Avalanche Current L = 0.1 m H IAS 20 Avalanche Energy EAS 20 mJ Maximum Po wer Dissipation TC = 25 °C PD WTC = 70 °C 3.2 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical M aximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50 °C/W Maximum Junction-to-Foot (D rain) Steady State RthJF 20 25 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com

Notes: a. P ulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, un less otherwise noted Parameter Symbol Test Co nditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 34 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4.7 Gate-Source Threshold V oltage VGS(th) VDS = VGS , ID = 250 µA 1.0 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Dr ain Current IDSS VDS = 40 V, VGS = 0 V 1 µAVDS = 40 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 10 A 0.0038 ΩVGS = 4.5 V, ID = 7 A 0.0057 Forward Tra nsconductancea gfs VDS = 15 V, ID = 10 A 30 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 985 pFOutput Capacitance Coss 205 Reverse Transfe r Capacitance Crss 76 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 18 27 nCVDS = 15 V, VGS = 4.5 V, ID = 10 A 81 2 Gate-Sou rce Charge Qgs 2.4 Gate-Drain Charge Qgd 2.3 Gate Resistance Rg f = 1 MHz 0.3 1.3 2.6 Ω Tur n- On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 14 25 ns Rise Time tr 12 24 Turn-Off Delay Ti me td(off) 19 35 Fall Tim e tf 91 8 Tur n-O n Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 81 6 Rise Time tr 10 20 Turn-Off Delay T ime td(off) 16 30 Fall Time tf 91 8 Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.5 A Pulse Diode Forw ard Currenta ISM 50 Body Diode Voltage VSD IS = 3 A 0.76 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs , TJ = 25 °C 14 28 ns Body Diode Reverse Reco very Charge Qrr 51 0 n C Reve rse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 6 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless oth erwise noted Output Characteristics On-Res istance vs. Drain Current and Gate Voltage Gate Charge 0.0 0.5 1.0 1 .5 2.0 2.5 VGS =1 0t h ru 5 V VGS =4V VDS - Drain-to-So urce Voltage (V) - Drain Current (A)I D 0.004 0.005 0.006 0.007 0.008 0.009 0 102 03 04 0 50 VGS =1 0V VGS =4 .5 V - On-Resistance (Ω )RDS(on) ID - Drain Current (A) VDS =2 0V ID =1 0A VDS =1 5V VDS =1 0V - Gate-to-So urce Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Character istics Capacitance On-Resistance vs. Junction Temperature 0.0 1.6 3.2 4.8 6.4 8.0 012345 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to- Source Voltage (V) - Drain Current (A)I D Crss 200 400 600 800 1000 0 2.4 4.8 7.2 9.6 Ciss Coss VDS - Drain-to-So urce Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID =1 0A VGS =4 .5 V VGS =1 0V TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless other wise noted Source-Drain Diode F orward Voltage Threshold Voltage 1.2 0.01 0.001 0.1 100 TJ = 150 °C TJ = 25 °C VSD -S ource-to- Drain Voltage (V) - Source Current (A)I S - 0.8 - 0.6 - 0.4 - 0.2 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5m A Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source V oltage Single Pulse Power, Junction-to-Ambient 0.002 0.004 0.006 0.008 0.010 0.012 012 345 67 8 91 0 TJ =2 5 ° C TJ = 125 °C ID =1 0A - On-Resistance (Ω )RDS(on) VGS - Gate-to- Source Voltage (V) 0 111 0 0 .0 0.01 0.1 Time (s) Power ( W) Safe Operating Area, Junc tion-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse 10 s Limited byR DS(on)* BVDSS Limited 1m s 10 ms 100 ms DC VDS - Drain-to-So urce Voltage (V) * VGS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) I D - Drain Current (A) Power, Junction-to -Ambient 0.0 1.2 2.4 3.6 4.8 6.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Jun ction-to-Foot 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 TA -A mbient Temperature (°C) Power (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com

TYPICAL CHARACTERISTICS 25 C, unless oth erwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 0.1 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 10-3 10-2 1 10 100010-110-4 100 Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance 0.1 0.01 Normalized Thermal Transient Impedance, Junction-to-Fo ot 10-3 10-2 01110-110-4 0.2 0.1 Duty Cycle = 0. Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 0.02 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.01 4 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4842N A ll data sheet.com