SSG4565

SSG4565 VBSEMI | Alldatasheet

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N- and P-Channel 40V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET® Power MOSFET  100 % Rg and UIS Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Motor Drive Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel). e. Package limited. PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)a Qg (Typ.) N-Channel 0 0.015 at VGS = 10 V 13.3 at VGS = 4.5 V 7.6 P-Channel - 0 0.017 at VGS = - 10 V 0.022 at VGS = - 4.5 V - 6.8 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Cha nn el Unit Drain-Source Voltage VDS 0 - 0 VGate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 7.6 - 6.8 TA = 25 °C 6.8b, c - 5.6b, c TA = 70 °C 5.4b, c - .3 b, c Pulsed Drain Current (10 µs Pulse Width) IDM - 30 Source-Drain Current Diode Current TC = 25 °C IS 3.6 - 3.6 TA = 25 °C 1.6b, c - 1.6b, c Pulsed Source-Drain Current ISM - 30 Single Pulse Avalanche Current L = 0.1 mH IAS 20 - 20 Single Pulse Avalanche Energy EAS mJ Maximum Power Dissipati on TC = 25 °C PD 6.1 5.2 W TC = 70 °C TA = 25 °C 3b, c 3b, c TA = 70 °C 2.28b, c 2.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ . Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 20 32.5 27 32.5 °C/WMaximum Junction-to-Foot (Drain) Steady State RthJF 10 20 19 28 - 8.0 9.0 0.018 4 4 Typ. 9.0 8.0 25 20 3.6 3.1 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ .a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 0 VVGS = 0 V, ID = - 250 µA P-Ch - 0 VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA N-Ch 30 mV/°C ID = - 250 µA P-Ch - 24 VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA N-Ch - 4.1 ID = - 250 µA P-Ch 5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1 2.2 VVDS = VGS, ID = - 250 µA P-Ch - 0.9 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch ± 100 nAVDS = 0 V, VGS = ± 20 V P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 0 V, V GS = 0 V N-Ch 1 µA VDS = - 0 V, V GS = 0 V P-Ch - 1 VDS = 0 V, V GS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 0 V, V GS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V N-Ch AVDS = - 5 V, VGS = - 10 V P-Ch Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 6.8 A N-Ch 0.015 Ω VGS = - 10 V, ID = - 8 A P-Ch 0.017 VGS = 8 V, ID = 6.7 A N-Ch VGS = - 8 V, ID = - 6.5 A P-Ch 0.019 VGS = 4.5 V, ID = 6.6 A N-Ch 0.018 VGS = - 4.5 V, ID = - 5 A P-Ch 0.022 Forward Transconductanceb gfs VDS = 15 V, ID = 6.8 A N-Ch 37 SVDS = - 15 V, ID = - 6.7 A P-Ch 35 Dynamica Input Capacitance Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz N-Ch 1321 pF P-Ch 1345 Output Capacitance Coss N-Ch 745 P-Ch 792 Reverse Transfer Capacitance Crss N-Ch 214 P-Ch 245 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch 13.3 20 nC VDS = - 20 V, VGS = - 10 V, ID = - 10 A P-Ch 13 20 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 10 A P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A N-Ch 6.5 10 P-Ch 21.7 33 Gate-Source Charge Qgs N-Ch 2.3 P-Ch 5.6 Gate-Drain Charge Qgd N-Ch 1.7 P-Ch 9.8 0.016 -30 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 30 0 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “A bsolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise note Parameter Symbol Tes t Conditions Min. Typ.a Max. Unit Dynamica Tur n-On Delay Ti me td(on) N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω N-Ch 5 10 ns P-Ch 10 20 Rise Time tr N-Ch 10 20 P-Ch 9 18 Turn-Off Delay Ti me td(off) N-Ch 16 25 P-Ch 50 90 Fall Time tf N-Ch 7 14 P-Ch 13 26 Tur n-On De lay Time td(on) N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch 11 22 P-Ch 42 75 Rise Time tr N-Ch 12 22 P-Ch 40 70 Turn-Off Dela y Time td(off) N-Ch 17 26 P-Ch 40 70 Fall Time tf N-Ch 7 14 P-Ch 18 35 Drain-Source Body Diode Characteristics Continuous Source-Dra in Diode Current IS TC = 25 °C N-Ch 5.6 AP-Ch - 5.6 Pulse Diode Forward Currenta ISM N-Ch 40 P-Ch - 40 Body Diode Voltage VSD IS = 5.4 A N-Ch 0.81 1.2 VIS = - 2 A P-Ch - 0.77 - 1.2 Body Diode Reverse Recovery Ti me trr N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 17 34 nsP-Ch 41 80 Body Diode Reverse Recov ery Charge Qrr N-Ch 10 20 nCP-Ch 32 65 Reverse Recovery F all Time ta N-Ch 10 nsP-Ch 15 Reverse Recovery Rise Time tb N-Ch 7 P-Ch 26 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 0.5 1 1.5 2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V 0.010 0.015 0.020 0.025 0.030 0 10 20 30 40 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 8 V VGS = 4.5 V VGS = 10 V 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 10 V VDS = 20 V VDS = 30 V ID = 6.8 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperatur e 0 0.6 1.2 1.8 2.4 3 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 700 1100 1300 1500 1700 0 10 20 30 40 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistance ( Normalized) TJ - Junction Temperature (°C) ID = 6.8 A VGS = 10 V; 4.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltag e 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 0.7 1.3 1.6 1.9 - 50 - 25 0 5025 75 100 125 150 VGS(th) (V) TJ - Temperature (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Puls e Power, Junction-to-Ambient 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 6.8 A 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 0.1 100 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s DC 10 s E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max) = 150 °C, using junc tion -to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction-to-Foot 0 25 50 75 100 125 150 Power (W) TC - Case Temperature (°C) Power Derating, Junction-to-Amb ient 0.0 0.25 0.50 0.75 1.0 1.25 0 25 50 75 100 125 150 Power (W) TA - Ambient Temperature (°C) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction -to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Jun ction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, un less otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge VGS =1 0 V thru 4V VGS =3V VGS =2V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0.015 0.020 0.025 0.030 0 1 02 03 04 0 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 8 V VGS = 4.5 V VGS = 10 V 0 9 18 27 36 45 ID =1 0A VDS =2 0V VDS =3 0V VDS =1 0V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Junction Temperature 012345 TC = 125 °C TC = 25 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150ID =8A VGS =4 .5 V VGS =1 0V TJ - Junction Temperature (°C) (Normalized)RDS(on) - On-Resistance VDS - Drain-to-Source Voltage (V) Capacitance 700 1100 1300 1500 1700 0 10 20 30 40 C - Capacitance (pF) Ciss Coss Crss E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) Source-Drain Diode Forward Voltage Threshold Voltag e 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 150 ID =5m A ID = 250 μA VGS(th) Variance (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Puls e Power, Junction-to-Ambient 0.00 0.03 0.06 0.09 0.12 0.15 012 345 67 89 1 0 TJ =2 5 ° C TJ = 125 °C ID =8A RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 0 111 0 0 .00 .01 0.1 Time (s) Power (W) Safe Operating Area, Junction-to-Ambient 0.01 100 100 0.01 0.1 10 s 10 ms 0.1 1 10 TA = 25 °C Single Pulse 1m s DCBVDSS Limited 100 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, un less otherwise noted) * The power dissipation P D is based on T J(max) = 150 °C, using junc tion -to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction-to-Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junction-to-Amb ient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) Normalized Thermal Transient Impedance, Junction -to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 110 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Jun ction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3 .80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSG4565 A ll data sheet.com