SSG4504

SSG4504 VBSEMI | Alldatasheet

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Technical content

N- and P-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Avai lable  TrenchFET ® Power MOSFET  100 % R g and UIS Tested

APPLICATIONS

 CCFL Inverter PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)a Qg (Typ.) N-Channel 60 0.028 at VGS = 10 V 5.3 6 nC0.031 at VGS = 4.5 V 4.7 P-Channel - 60 0.050 at VGS = - 10 V - 4.9 8 nC0.060 at VGS = - 4.5 V - 4.5 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 N-Channel MOSFET P-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless othe rwise noted Parameter Symbol N-Channel P - Channel Unit Drain-Source Voltage VDS 60 - 60 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 5.3 - 4.9 A TC = 70 °C 4.3 - 4.2 TA = 25 °C 4.3b, c - 4.0b, c TA = 70 °C 3.4b, c - 3.4b, c Pulsed Drain Current (10 µs Pulse Width) IDM 20 - 25 Source Drain Current Diode Current TC = 25 °C IS 2.6 - 2.8 TA = 25 °C 1.7b, c - 1.7b, c Pulsed Source-Drain Current ISM 20 - 25 Single Pulse Avalanche Current L = 0.1 mH IAS 11 15 Single Pulse Avalanche Energy EAS 6.1 11 mJ Maximum Power Di ssipation TC = 25 °C PD 3.1 3.4 W TC = 70 °C 22 .2 TA = 25 °C 2b, c 2b, c TA = 70 °C 1.3b, c 1.3b, c Operating Junction and Storage Te mperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 55 62.5 53 62.5 °C/W Maximum Junction-to-Foot (Dr ain) Steady State RthJF 33 40 30 37 SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

SPECIFICATIONS TJ = 25 °C, unless ot herwise noted Parameter Symbol Test Cond itions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 60 VVGS = 0 V, ID = - 250 µA P-Ch - 60 VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA N-Ch 55 mV ID = - 250 µA P-Ch - 50 VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA N-Ch - 6 ID = - 250 µA P-Ch 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1 3 VVDS = VGS, ID = - 250 µA P-Ch - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch 100 nAP-Ch - 100 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V N-Ch 1 µA VDS = - 60 V, VGS = 0 V P-Ch - 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 60 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 10 V N-Ch 20 AVDS ≤ - 5 V, VGS = - 10 V P-Ch - 25 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 4.3 A N-Ch 0.026 0.028 Ω VGS = - 10 V, ID = - 3.1 A P-Ch 0.055 0.060 VGS = 4.5 V, ID = 3.9 A N-Ch 0.029 0.035 VGS = - 4.5 V, ID = - 0.2 A P-Ch 0.060 0.070 Forward Transconductanceb gfs VDS = 15 V, ID = 4.3 A N-Ch 15 SVDS = - 15 V, ID = - 3.1 A P-Ch 8.5 Dynamica Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz N-Ch 665 pF P-Ch 65 Output Capacitance Coss N-Ch 75 P-Ch 95 Reverse T ransfer Capacitance Crss N-Ch 40 P-Ch 60 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 4.3 A N-Ch 13 20 nC VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A P-Ch 14.5 22 N-Channel VDS = 30 V, VGS = 4.5 V, ID = 4.3 A P-Channel VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A N-Ch 6 9 P-Ch 8 12 Gate-Source Charge Qgs N-Ch 2.3 P-Ch 2.2 Gate-Drain Charg e Qgd N-Ch 2.6 P-Ch 3.7 Gate Resista nce Rg f = 1 MHz N-Ch 2 3 ΩP-Ch 14 20 SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those li sted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless oth erwise noted Parameter Symbol Test Conditio ns Min. Typ.a Max. Unit Dynamica Tur n-On Dela y Time td(on) N-Channel VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 30 V, RL = 12.5 Ω ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch 15 25 ns P-Ch 30 45 Rise Time tr N-Ch 65 100 P-Ch 70 105 Turn-Off Delay T ime td(off) N-Ch 15 25 P-Ch 40 60 Fall Tim e tf N-Ch 10 15 P-Ch 30 45 Tur n-On D elay Time td(on) N-Channel VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 30 V, RL = 12.5 Ω ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω N-Ch 10 15 P-Ch 10 15 Rise Time tr N-Ch 15 25 P-Ch 13 20 Turn-Off Delay T ime td(off) N-Ch 20 30 P-Ch 35 55 Fall Tim e tf N-Ch 10 15 P-Ch 30 45 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C N-Ch 2.6 AP-Ch - 2.8 Pulse Diode Forward Currenta ISM N-Ch 20 P-Ch - 25 Body Diode Voltage VSD IS = 1.7 A N-Ch 0.8 1.2 VIS = - 2 A P-Ch - 0.8 - 1.2 Body Diode Reverse Reco very Time trr N-Channel IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 30 60 nsP-Ch 30 50 Body Diode Revers e Recovery Charge Qrr N-Ch 32 50 nCP-Ch 35 60 Reverse Recovery Fall Time ta N-Ch 25 nsP-Ch 16 Reverse Recovery Rise Time tb N-Ch 5 P-Ch 14 SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 2.0 VGS = 10 thru 4 V 3 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 0.060 0 2 4 6 8 10 12 14 16 18 20 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V RDS(on) - On-Resistance (mΩ) 0 3 6 9 12 15 VDS = 30 V ID = 4.3 A - Gate-to-Source Voltage (V) Qg - T otal Gate Charge (nC) V GS Transfer Characteristics Capacitance On-Resistan ce vs. Junction Temperature - 55 °C 0 25 °C TC = 125 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss0 200 400 600 800 1000 0 1 02 03 04 05 06 0 Coss Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 4.3 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

L CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Vo ltage Threshold Voltage 1.0 1.4 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) VGS(th) (V) On-Resistance vs. Gate-to-Source Voltage Si ngle Pulse Power, Junction-to-Ambient 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0 2468 10 I D = 4.3 A V GS - Gate-to-Source V oltage (V) RDS(on) - Drain-to-Source On-Resistance (mΩ) Power (W) Time (s) 1 10000.10.01 10 100 Safe Operating Area 100 0.1 1 10 100 0.001 TA = 25 °C Single Pulse - Drain Current (A)I D 0.1 *DS(on) Limited by R VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 0.01 1 ms 10 ms 100 ms DC 100 µs 1 s 10 s SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipat ion PD is based on T J(max) = 150 °C , usin g junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) Single Pulse Avalanche Cap ability 100 TA - Time In Avalanche (s) 0.0010.00010.000010.000001 IC - Peak Avalanche Current (A) TA = L . ID BV - VDD SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

L CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Imped ance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Imp edance, Junction-to-Case 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 2 5 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Curre nt Gate Charge 012345678 VGS = 10 thru 5 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 3 V 4 V 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0 5 10 15 20 25 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V RDS(on) - On-Resistance (Ω) 0 3 6 9 12 15 VDS = 30 V ID = 3.1 A - Gate-to-Source Voltage (V) Qg - T otal Gate Charge (nC) V GS Transfer Characteristics Capacitance On-Resistan ce vs. Junction Temperature TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss0 200 400 600 800 1000 0 1 02 03 04 05 06 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 3.1 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless ot herwise noted Source-Drain Diode Forward Vo ltage Threshold Voltage TJ = 25 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = 150 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Singl e Pulse Power 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 02468 1 0 ID = 3.1 A VGS - Gate-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) Power (W) Time (s) 1 6001010-110-3 10010-2 Safe Operating Area, Junction-to-Case 100 0.1 1 10 100 0.01 - Drain Current (A)I D

0.1 TA = 25 °C

P(t) = 10 DC ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 IDM Limited Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified> SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipat ion PD is based on T J(max) = 150 °C , usin g junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction-to -Foot 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) Single Pulse Avalanche Capability 100 TA - Time In Avalanche (s) 0.0010.00010.000010.000001 IC - Peak Avalanche Current (A)TA L . ID BV - V DD SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted Normalized Thermal Transient Imped ance, Junction-to-Ambient 10 -3 10 -2 1 10 60010 -1 10 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 85 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Imp edance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.2 5 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) SSG4504 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

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