SPP80P06PG

SPP80P06PG VBSEMI | Alldatasheet

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Technical content

P-Channel 60-V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET  100 % UI S Tested

APPLICATIONS

 Load Switch Notes: a. Based on TC = 25 °C. b. Surfa ce mounted on 1" x 1" FR4 board. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a Qg (Typ.) - 60 0.019 at VGS = - 10 V - 53 38 nC0.026 at VGS = - 4.5 V - 42 TO-220AB Top View GDS S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless ot herwise noted) Parameter Symbol Limit Unit Dr ain-Source Voltage VDS - 60 V Gate-Source Vo ltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 53a A TC = 70 °C - 46.8 TA = 25 °C -9.2b TA = 70 °C - 8.1b Pulsed Drain Current IDM - 200 Avalanche C urrent Pulse L = 0.1 mH IAS - 45 Single Pulse Avalanche Energy EAS 101 mJ Continuous Source-Drain Diode Cu rrent TC = 25 °C IS 69a ATA = 25 °C 2.1b Maximum P ower Dissipation TC = 25 °C PD 104.2a W TC = 70 °C 66.7a TA = 25 °C 3.1b TA = 70 °C 2b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb Steady State RthJA 33 40 °C/W Maximum Junction-to-C ase Steady State RthJC 0.98 1.2 SPP80P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: a. P ulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) Parameter Sy mbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA 68 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ - 5.2 Gate-Source Threshold V oltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-So urce Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Z ero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µAVDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS =-5 V, VGS = - 10 V - 120 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 30 A 0.019 VGS = - 4.5 V, ID = - 20 A 0.026 Forward Transconductancea gfs VDS = - 15 V, ID = - 50 A 20 S Dynamicb Input Capacitance Ciss VDS = - 25 V, VGS = 0 V, f = 1 MHz 3500 pFOutput Capacitance Coss 390 Reverse Transfe r Capacitance Crss 290 Total Gate Charge Qg VDS = - 30 V, VGS = - 10 V, ID = - 55 A 76 115 nCVDS = - 30 V, VGS = - 4.5 V, ID = - 55 A 38 60 Gate-Sou rce Charge Qgs 16 Gate-Drain Charge Qgd 19 Gate Resistan ce Rg f = 1 MHz 5. 2  Tur n-On Delay Time td(on) VDD = - 2 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  10 15 ns Rise Time tr 71 5 Turn-Off Dela y Time td(off) 70 110 Fall Time tf 40 60 Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 69 A Pulse Diode F orward Currenta ISM - 150 Body Diode Voltage VSD IS = - 30 A - 1 - 1.5 V Body Diode Re verse Recovery Time trr IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 45 68 ns Body Diode Reverse Reco very Charge Qrr 59 120 nC Reverse Reco very Fall Time ta 29 ns Reverse Recovery Rise T ime tb 16 SPP80P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transfer Ch aracteristics On-Resistance vs. Drain Current VGS =5V 120 160 200 0 12345 VDS - Drain-to-SourceVoltage (V) ID - Drain Current (A) VGS =1 0t h ru 6 V VGS =4 V VGS =3 V 0 12345 VGS - Gate-to-So urce Voltage (V) ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C 0.00 0.01 0.02 0.03 0.04 0.05 02 0 4 0 6 0 8 0 100 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V Transfer Characteristics Trans conductance Capacitance 100 0 12345 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C 100 01 2 2 4 3 6 48 60 ID - Drain Current (A) gfs - Transconductance (S) TC = 125 °C TC = - 55 °C TC = 25 °C Crss 1000 2000 3000 4000 5000 0 1 02 03 0 4 05 06 0 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss SPP80P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Charge Source-Drain Diode Forward Voltage Single Pulse Avalanche Current Capability vs. Time ID =5 5A 02 0 4 0 6 0 80 VGS - Gate-to- Source Voltage (V) Qg - Total Gate Charge (nC) VDS =3 0V VDS =2 0V TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) 100 TJ = 25 °C 0.0001 1000 0.1 - (A) IDav Tin - (s) 0.001 0.01 0.1 100 IAV (A) at TJ = 25 °C IAV (A) at TJ = 150 °C On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Gate-to-Source Voltage Drain-Source Breakdown Voltage vs. Junction Temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized)RDS(on) - On-Resistance ID = 20 A VGS =4 . 5V VGS =1 0V 0.00 0.02 0.04 0.06 0.08 0.10 0246 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 150 °C ID =2 0A - 50 - 25 0 25 50 75 100 125 150 ID = 10 mA V(BR)DSS - (V) TJ - Temperature (°C) SPP80P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) Threshold Voltage Po wer Derating, Junction-to-Case - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature(°C) ID =1m A 100 120 140 0 25 50 75 100 125 150 TJ - Temperature (°C) Power (W) Max. Drain Current vs. Case Temp erature Safe Operating Area, Junction-to-Case 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) VDS - Drain-to-So urce Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified 1000 0.1 1 10 100 0.1 100 - Drain Current (A)I D TC = 25 °C Single Pulse 100 µs 10 ms 100 ms, DC Limited byR DS(on)* BVDSS Limited 10 µs 1m s Normalized Thermal Transie nt Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0. Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance 10-4 10-3 10-2 10-1 1 0.05 0.02 Single Pulse 0.1 SPP80P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

• M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 SPP80P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. SPP80P06PG E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com