SPP18P06PH VBSEMI | Alldatasheet

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VDS (V) RDS(on) (Ω) ID (A) Q g (Typ) - 60 0.062 at VGS = - 10 V - 20 12.50.074 at VGS = - 4.5 V - 15 S G D P-Channel MOSFET Notes: a. See SOA curve for voltage derating. b. Surface Mounted on 1" x 1" FR-4 boad. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, un less otherwise noted Parameter Symbol L i mit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID - 20 A TC = 100 °C - 12 Pulsed Drain Current IDM - 60 Continuing Source Current (Diode Conduction) IS - 12 Avalanche Current IAS - 12 Single Pulse Avalanche Energy L = 0.1 mH EAS 7.2 mJ Maximum P ower Dissipation TC = 25 °C PD 60a WTA = 25 °C 2b Operating Junction and St orage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol T y pical Maximum Unit Junction-to-Ambientb t ≤ 10 sec RthJA 20 25 °C/WSteady State 62 75 Junction-to-Cas e RthJC 56 P-Channel 60-V (D-S) MOSFET

FEATURES

  • TrenchFET ® Power MOSFET  100 % UIS Test ed

APPLICATIONS

 Load Switch TO-220AB Top View GD S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPP18P06PH A ll data sheet.com

Notes: a. Guaranteed by design, not subject to production testing. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless oth erwise noted Parameter Symbol Test Co nditions Min Typa Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 2.0 - 3.0 Gate-Body Lea kage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Vo ltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µAVDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 150 On-State Drain Currentb ID(on) V DS = - 5 V, VGS = - 10 V - 10 A Drain-Source On-State Resistanceb rDS(on) VGS = - 10 V, ID = - 5 A 0.200 Ω VGS = - 10 V, ID = - 5 A, TJ = 125 °C VGS = - 10 V, ID = - 5 A, TJ = 175 °C 0.300 VGS = - 4.5 V, ID = - 2 A 0.120 Forward Transconductanceb gfs VDS = - 15 V, ID = - 5 A 8S Dynamic Input Capacitance Ciss VDS = - 25 V, VGS = 0 V, f = 1 MHz 850 pFOutput Capacitance Coss 120 Reverse Transfer Capacitance Crss 90 Total Gate Charge Qg VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A nCGate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 3.2 Gate Resistance Rg f = 1 MHz 8.0 Ω Tur n-O n Delay Timec td(on) VDD = - 30 V, RL = 3.57 Ω ID ≅ - 8.4 A, VGEN = - 10 V, RG = 2.5 Ω 51 0 nsRise Timec tr 14 25 Turn-Off Delay T imec td(off) 15 25 Fall Ti mec tf 71 2 Source-Drain Diode Ratings an d Characteristics (TC = 25 °C)b Pulsed Current ISM - 20 A Forward Voltageb VSD IF = - 2 A, VGS = 0 V - 0.9 - 1.3 V Reverse Reco very Time trr IF = - 8 A, di/dt = 100 A/µs 50 80 ns Reve rse Recovery Time Qrr 80 120 nC 0.100 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPP18P06PH A ll data sheet.com

25 °C unless noted Output Characteristics Trans conductance Capacitance 0 2468 10 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 10 thru 6 V 3 V 4 V 5 V 02468 10 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 200 400 600 800 1000 1200 1400 1600 0 1 02 03 04 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Ciss Coss Transfer Characteristics On-Resistance vs. Drain Current Gate Ch arge VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C 125 °C TC = - 55 °C 0.000 0.025 0.050 0.075 0.100 0.125 0.150 04 8 12 16 20 - On-Resistance (Ω) ID - Drain Current (A) rDS(on) VGS = 4.5 V VGS = 10 V 0 5 10 15 20 25 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) V GS VDS = 30 V ID = 8.4 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPP18P06PH A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C un less noted THERMAL RATINGS On-Resistance vs. Junction Temp erature 0.5 0.8 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 50 A rDS(on) - On-Resistance (Normalized) Source-Drain Diode Forward V oltage VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 0.001 TJ = 25 °C TJ = 150 °C 0.1 0.01 Drain Current vs. Case Temperature 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) - Drain Current (A)I D Safe Operating Area - Drain Current (A)I D 100 0.001 0.1 1 10 100 0.1 TC = 25 °C Single Pulse 1 ms 10 ms 100 ms, DC 10 µs 100 µs*Limited by rDS(on) VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified 0.01 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPP18P06PH A ll data sheet.com

ansient Impedance, Junction-to-Ambient 10-3 10-2 0 0 60 1110-110-− 4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 0 60 1110-110-− 4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (sec) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPP18P06PH A ll data sheet.com

  • M = 1.32 mm to 1.62 mm (dim ension inc luding protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPP18P06PH A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPP18P06PH A ll data sheet.com