SPN80T10 VBSEMI | Alldatasheet

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Technical content

N-Channel 100 V (D-S) MOSFET

FEATURES

  • ThunderFET® power MOSFET
  • Maximum 175 °C junction temperature
  • 100 % Rg and UIS tested
  • Material categorization: for definitions of compliance please see Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). d. Package limited. PRODUCT SUMMARY VDS (V) R DS(on) () MAX. I D (A) d Qg (TYP.) 100 0.005 at VGS = 10 V 120 0.006 at VGS = 7.5 V 120 TO-220AB S S D G N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 120 d A TC = 70 °C d Pulsed Drain Current (t = 100 μs) IDM 480 Avalanche Current IAS 73 Single Avalanche Energy a L = 0.1 mH EAS 266 mJ Maximum Power Dissipation a TC = 25 °C PD 370 b W TC = 125 °C 120b Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient (PCB Mount) c RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN80T10 A ll data sheet.com

a. Pu ls e test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those l isted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unles s otherwise noted) PARAMETER SY MBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-So urce Breakdown Voltage V DS VGS = 0 V, ID = 250 μA 100 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 nA Ze ro Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 1 μA VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 5 mA On-State Drain Current a ID(on) V DS  10 V, VGS = 10 V 120 - - A Drain-S ource On-State Resistance a RDS(on) VGS = 10 V, ID = 20 A - 0.005 - VGS = 7.5 V, ID = 15 A - 0.006 - Forwar d Transconductance a gfs VDS = 15 V, ID = 20 A - 82 - S Dynamic b Input Capacitance Ciss VGS = 0 V, VDS = 50 V, f = 1 MHz - 10000 - pFOutput Capacitance Coss - 2025 - Rev erse Transfer Capacitance Crss - 165 - Total Gate Charge c Qg VDS = 50 V, VGS = 10 V, ID = 20 A -7 6 1 2 0 nCGa te-Source Charge c Qgs -2 3- Gate-Drain Charge c Qgd -1 7- Gate Resista nce Rg f = 1 MHz 0.6 3.3 6.6  Turn-On D elay Time c td(on) VDD = 50 V, RL = 5  ID  10 A, VGEN = 10 V, Rg = 1  -1 5 3 0 ns Rise T ime c tr -2 2 4 0 Turn-Of f Delay Time c td(off) -5 5 100 Fa ll Time c tf -1 5 3 0 Drain-Sourc e Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Cu rrent ISM -- 4 8 0 A Fo rward Voltage a VSD IF = 10 A, VGS = 0 V - 0.8 1.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN80T10 A ll data sheet.com

ARACTERISTICS (TA = 25 °C, unles s otherwise noted) Output Characteristics Transcon ductance Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 100 150 200 0 2 4 6 8 ID - Drain Curr ent (A) VDS - Drain- to-Source Voltage (V) VGS = 10 V thru 7 V VGS = 5 V VGS = 6 V 120 160 200 0 14 28 42 56 gfs - Trans conductance (S) ID - Drain Cur rent (A) TC = 125 °C TC = - 55 °C TC = 25 °C 4000 8000 12000 16000 0 2 04 06 08 0 1 0 0 C - Capacitance (pF) VDS -D r a in - t o -Source Voltage (V) Ciss Coss Crss 120 150 0 2 4 6 8 ID - Drain Curr ent (A) VGS - Gate-to-Source Voltage (V) TC = - 55°C TC = 125°C TC = 25°C 0.002 0.004 0.006 0.008 03 0 60 9 0 1 20 RDS(on) -O n - Res istance (Ω) ID - Drain Current (A) VGS = 7.5 V VGS = 10 V 02 04 0 6 0 80 VGS - Gate-to-Source Voltage (V) Qg -T otal Gate Charge (nC) VDS = 80 V VDS = 50 V VDS = 25 VID = 20 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN80T10 A ll data sheet.com

ARACTERISTICS (TA = 25 °C, unles s otherwise noted) On-Resistance v s. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 175 RDS(on) - On-Resist ance (Normalized) TJ - Junction Temperature (°C) ID = 20 A VGS = 10 V 0.000 0.004 0.008 0.012 0.016 0.020 0 2 4 6 8 10 RDS(on) - On-Resistance (Ω VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C 0.001 0.01 0.1 100 1.0 1.2 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C 1.6 2.2 2.8 3.4 50 - 25 0 25 50 75 100 125 150 175 VGS(th) (V) TJ -T e m pe r a t u r e (°C) ID = 250 μ A 100 105 110 115 120 125 - 50 - 25 0 25 50 75 100 125 150 175 VDS - Drain -to-Source Voltage (V) TJ - Junction Temperature (°C) ID = 10 mA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN80T10 A ll data sheet.com

S (TA = 25 °C, u nless otherwise noted) Safe Oper ating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 0.1 100 1000 0.01 0. 1 1 10 100 ID - Drain C urrent (A) VDS -D r a in - t o -Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* 100 μs IDM Limited TC = 25 °C Single Pu lse BVDSS Limited 1 ms 100 ms -D C 10 ms ID Limited 10 μs 10-4 10-3 10-2 10-1 1 10 100 1000 0.01 0.001 0.1 0.0001 Square Wave Pul se Duration (s) Normalized Effective Transient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN80T10 A ll data sheet.com

S (TA = 25 °C, u nless otherwise noted) Normaliz ed Thermal Transient Impedance, Junction-to-Case Note

  • The characteristics shown in the two graphs  - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. Square Wa ve Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Eff ective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.05 0.02 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN80T10 A ll data sheet.com
  • M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHE S A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN80T10 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN80T10 A ll data sheet.com