SPN4850S8RG VBSEMI | Alldatasheet

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Technical content

N-Channel 60-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2 -21 Definition  TrenchFET ® Power MOSFET  Optim ized for “Low Side” Synchronous Rectifier Operation  100 % Rg and UIS Tested

APPLICATIONS

 CCFL Inverter Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)d Qg (Typ.) 0.025 at VGS = 10 V 7.6 10.5 nC 0.030 at VGS = 4.5 V 6.5 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless ot herwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 7.6a A TC = 70 °C 6.8 TA = 25 °C 6.1b, c TA = 70 °C 4.8b, c Pulsed Drain Current IDM 25 Continuous Source-Drain Diode Current TC = 25 °C IS 4.2 TA = 25 °C 2.1b, c Avalanche Current L = 0.1 mH IAS 15 Single-Pulse Avalanche Energy EAS 11.2 mJ Maximum Power Di ssipation TC = 25 °C PD WTC = 70 °C 3.2 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATI NGS Parameter Symbol Typical Maximum Un it Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50 °C/WMaximum Junction-to-Foot (Drain) Steady State RthJF 20 25 S S D D D S G D SO-8 Top View D G S N-Channel MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless ot herwise noted Parameter Symbol Test Con ditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 55 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 25 A Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs VDS = 15 V, ID = 4.6 A 20 S Dynamicb Input Capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz 1100 pFOutput Capacitance Coss 90 Reverse Transfer Capacitance Crss 55 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 4.6 A 21 32 nCVDS = 30 V, VGS = 4.5 V, ID = 4.6 A 10.5 16 Gate-Source Charge Qgs 3.5 Gate-Drain Charge Qgd 4.2 Gate Resistance Rg f = 1 MHz 3.3 5 Ω Tur n-On Delay Time td(on) VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 ns Rise Time tr 150 225 Turn-Off DelayTime td(off) 20 30 Fall Time tf 60 90 Tur n-On De lay Time td(on) VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 10 15 Rise Time tr 15 25 Turn-Off DelayTime td(off) 25 40 Fall Time tf 10 15 Drain-Source Body Diod e Characteristics Continous Source-Drain Diode Current I S TC = 25 °C 4.2 APulse Diode Forward Currenta ISM 25 Body Diode Voltage VSD IS = 2 A 0.8 1.2 V Body Diode Reverse Recov ery Time trr IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 25 50 ns Body Diode Reverse Recover y Charge Q rr 25 50 nC Reverse Recover y Fall Time ta 19 nsReverse Recovery Rise T ime tb 6 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unle ss otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 1.8 2.0 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS = 3 V VGS = 10 V thru 4 V 0 5 10 15 20 25 ID - Drain Current (A) RDS(on) - On-Resistance (Ω) 0.024 0.028 0.032 0.036 0.040 VGS = 4.5 V VGS = 10 V 0 5 10 15 20 25 ID = 4.6 A VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 30 V VDS = 48 V Transfer Characteristics Capacitance On-Resist ance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) ID = 125 °C ID = 25 °C TC = – 55 °C Crss0 300 600 900 1200 1500 0 1 02 03 04 05 06 0 V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) VGS = 10 V, ID = 4.6 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless oth erwise noted Source-Drain Diode Forward Voltag e Threshold Voltage VSD - Source-to-Drain Voltage (V) IS - Source Current (A) TJ = 150 °C TJ = 25 °C 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 25 50 75 100 125 150 VGS(th) (V) ID = 250 µA - 50 - 25 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Sing le Pulse Power, Junction-to-Ambient 0.02 0.03 0.04 0.05 0.06 0.07 0.08 02468 10 VGS - Gate-to-Source Voltage (V) RDS(on) - Drain-to-Source On-Resistance (Ω) ID = 4.6 A 125 °C 25 °C Power (W) Time (s) 1 100 6001010-110-210-3 Safe Operating Area 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TA = 25 °C Single Pulse BVDSS Limited Limited by RDS(on)* 1 ms 10 ms 100 ms DC 1 s 10 s 100 µs E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unle ss otherwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is mo re u seful in settling the upper dissipation lim it for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Package Limited Power, Junction-to-Foot TC - Case Temperature (°C) Power (W) 25 50 75 100 125 150 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless oth erwise noted Normalized Thermal Transient Impedance, Jun ction-to-Ambient 10-3 10-2 0 0 60 1110-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70 C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedan ce, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.2 5 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPN4850S8RG A ll data sheet.com