SPB80N06S2L-07

SPB80N06S2L-07 VBSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET® power MOSFET
• Package with low thermal resistanc e
• AEC-Q101 qualified d
• 100 % Rg and UIS tested Notes a. Package l i mited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) at VGS = 10 V 0.005 ID (A) 100 Configuration Single Pa ckage TO-263 TO-263 Top View G D S G D S D G SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless ot herwise noted) PARAMETER SYMBOL LIMIT UNIT Drai n-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a ID 100 A TC = 125 °C 65 Continuous Source Current (Diode Conduction) a IS 120 Pulsed Drain Current b IDM 450 Single Pulse Aval anche Current L = 0.1 mH IAS 65 Single Pulse Avalanch e Energy EAS 211 mJ Maximum Power Diss ipation b TC = 25 °C PD

220 W TC = 125 °C 70

Operating Junction and Storage T emperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Am bient PCB Mount c RthJA 40 °C/WJunction-to-Case (Drain) RthJC 0.65 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com

a. Pulse test ; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those listed under “ Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless ot herwise noted) PARAMETER SYMBOL TEST CONDITI ONS MIN. TYP. MAX. UNIT Static Drain-So urce Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V Gate-Source Thr eshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 4.0 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Ga te Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 50 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 250 On-Sta te Drain Current a I D(on) V GS = 10 V VDS ≥ 5 V 120 - - A Drain-Source On-State Resistance a R DS(on) VGS = 10 V ID = 30 A - 0.006 - ΩVGS = 10 V ID = 30 A, TJ = 125 °C - 0.012 - VGS = 10 V I D = 30 A, TJ = 175 °C - 0.015 - Forward Transconduct ance b gfs VDS = 15 V, ID = 30 A - 94 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 5196 - pF Output Capacitance Coss - Reverse Transf er Capacitance Crss - Total Gate Charge c Qg VGS = 10 V V DS = 30 V, ID = 75 A -9 6 . 5 1 4 5 nC Gate- Source Charge Qgs -2 4 . 6- Gate-Drain Charge c Qgd -2 7 . 2- Gate Resistan ce Rg f = 1 MHz 0.3 1 1.7 Ω Turn-On Delay Ti me c td(on) VDD = 30 V, RL = 0.4 Ω ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω -1 6 2 4 nsRise Time c tr -1 4 2 1 Turn-Off Del ay Time c td(off) -3 4 5 1 Fall Tim e c tf -9 1 4 Source-Drain Diode Ratings a nd Characteristics b Pulsed Current a ISM -- Forward Voltage VSD IF = 75 A, VGS = 0 - 0.9 1.5 V 715 - 360 - A450 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com

ERISTICS (TA = 25 °C, unless othe rwise noted) Output Characteristics Transfer Chara cteristics On-Resistance vs. Drain Current Transfer Characteristics Transconductance Capacitance 100 125 150 175 200 225 0 4 8 12 16 20 ID - Drain Current (A) VDS -D r a i n - t o-Source Voltage (V) VGS = 10 V thru 7 V VGS = 6 V VGS = 4 V 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = -55 °CTC = 125 °C 0.000 0.004 0.008 0.012 0.016 0.020 0 20 40 60 80 100 120 RDS(on) -O n - R esistance (Ω) ID - Drain Current (A) VGS = 10 V 120 150 0 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = -55 °CTC = 125 °C TC = 25 °C 120 160 200 0 1 42 84 25 67 0 gfs -T r a nsconductance (S) ID - Drain Curren t (A) TC = 125 °C TC = -55 °C TC = 25 °C 2000 4000 6000 8000 10 000 0 10 20 30 40 50 60 C - Capacitance (pF) VDS -D r a i n - t o-Source V oltage (V) Ciss Coss Crss E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com

ERISTICS (TA = 25 °C, unless othe rwise noted) Gate Charge Source Drain Diode Forward Voltage Threshold Voltag e On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) Qg -T o t a l Gate Charge (nC) ID = 110 A VDS = 20 V 0.001 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C -1.8 -1.4 -1.0 -0.6 -0.2 0.2 0.6 -50 -25 0 25 50 75 100 125 150 175 VGS(th) Variance (V) TJ -T e m p e r a t u r e (°C) ID = 250 μA ID = 5 mA 0.6 0.9 1.2 1.5 1.8 2.1 -50 -25 0 25 50 75 100 125 150 175 RDS(on) -O n - R esistance(Norm alized) TJ - Junction Temperature (°C) ID = 10 A VGS = 10 V 0.00 0.01 0.02 0.03 0.04 0.05 02468 1 0 RDS(on) -O n - R esistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C -50 -25 0 25 50 75 100 125 150 175 VDS -D r a i n - t o-Source Vol tage (V) TJ - Junction Temperature (°C) ID = 10 mA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com

THERMAL RATINGS (TA = 25 °C, unless ot herwise noted) Safe Operating Ar ea Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 100 1000 0.01 0.1 1 10 100 ID - Drain Current (A) VDS -D r a i n - t o-Source V oltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s, 10 s, DC ID Limited 10-4 10-3 10-2 10-1 1 10 100 1000 0.01 0.001 0.1 0.0001 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com

THERMAL RATINGS (TA = 25 °C, unless ot herwise noted) Normalized Therma l Transient Impedance, Junction-to-Case Note

• The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 Single Pulse Normalized Effective Transient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com

TO-263 (D2PAK): 3-LEAD Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 ca n fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. -A- -B- A A e b E A c L2DL3 L Detail “A” K D3 6

0.010 M A M

DETAIL A (ROTATED 90°) SECTION A-A 0° - 5° M c b INCHES MILLIMETERS DIM. MIN. MAX. MI N. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 c1 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 0.010 BSC 0.254 BSC M - 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.635 (16.129) Recommended Minimum Pads Dimensions in Inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SPB80N06S2L-07 A ll data sheet.com