SPB80N04S2-H4

SPB80N04S2-H4 VBSEMI | Alldatasheet

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Technical content

N-Channel 40 V (D-S) MOSFET

FEATURES

• Thunder FET® power MO SFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested Material categorization: for definitions of compliance please see Notes a. D u ty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 0.005 at VGS = 10 V 100 53 nC 0.006 at VGS = 4.5 V 98 TO-263 G D S G D S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Dr ain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 100 A TC = 125 °C 60 Pulsed Drain Current (t = 100 μs) IDM 220 Avalanc he Current L = 0.1 mH IAS 50 Single Ava lanche Energy a EAS 125 mJ Maximum Po wer Dissipation a TC = 25 °C PD 150 b W TC = 125 °C 98 b Operating Junction and S torage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER S Y MBOL LIMIT UNIT Junction-to-Ambient (PCB Mount) c RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.75 SPB80N04S2-H4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

a. Pu ls e test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those l isted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unles s otherwise noted) PARAMETER SY MBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-So urce Breakdown Voltage V DS VGS = 0 V, ID = 250 μA 40 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Ze ro Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V - - 1 μA VDS = 40 V, VGS = 0 V, TJ = 125 °C - - 100 VDS = 40 V, VGS = 0 V, TJ = 175 °C - - 2 mA On-State Drain Current a ID(on) V DS  10 V, VGS = 10 V 90 - - A Drain-S ource On-State Resistance a RDS(on) VGS = 10 V, ID = 30 A - 0.005 - VGS = 4.5 V, ID = 30 A - 0.006 - Forwar d Transconductance a gfs VDS = 15 V, ID = 30 A - 85 - S Dynamic b Input Capacitance Ciss VGS = 0 V, VDS = 20 V, f = 1 MHz - 3330 - pFOutput Capacitance Coss - 1395 - Rev erse Transfer Capacitance Crss -9 5- Total Gate Charge c Qg VDS =20 V, V GS = 10 V, ID = 30 A - 53.5 81 nCGate- Source Charge c Qgs - 14.5 - Gate-Drain Charge c Qgd - 13.2 - Gate Resi stance Rg f = 1 MHz 0.9 1.9 3.8  Turn-On D elay Time c td(on) VDD = 20 V, RL = 1.67  ID  30 A, VGEN = 10 V, Rg = 1  -1 3 2 6 ns Rise T ime c tr -2 2 4 4 Turn-Of f Delay Time c td(off) -2 7 5 4 Fal l Time c tf -9 18 Drain-Sourc e Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM - Forward Vo ltage a VSD IF = 30 A, VGS = 0 V - 0.86 1.4 V Re verse Recovery Time trr IF = 30 A, di/dt =

100 A/μs

• 88 176 ns Peak Reverse Recovery Charge I RM(REC) -5 1 0 A Re verse Recovery Charge Qrr - 0.22 0.44 μC 220 - - SPB80N04S2-H4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (TA = 25 °C, unles s otherwise noted) Output Characteristics Transcon ductance Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 100 1000 10000 150 200 250 012345 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A VDS - Drain-to-Source V oltage (V) 2nd line VGS = 10 V thru5 V VGS =4V VGS = 2 V VGS =3 V 100 1000 10000 Axis Title 1st line 2nd line 2nd line gfs - Transconductance (S) ID - Drain Cu rrent (A) 2nd line TC = 25 °C TC =- 5 5 ° C TC = 125 °C 100 1000 10000 2400 3600 4800 6000 0 2 04 06 08 0 1 0 0 Axis Title 1st line 2nd line 2nd line C - Capacitance (pF) VDS - Drain-to-Source V oltage (V) 2nd line Crss Coss Ciss 100 1000 10000 160 200 02468 1 0 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A VGS - Gate-to-Source Vol tage (V) 2nd line TC = 25 °C TC =- 5 5 °CTC = 125 °C 100 1000 10000 0.004 0.005 0.006 0.007 0.008 0 4 0 6 0 8 0 1 0 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID - Drain Cu rrent (A) 2nd line VGS = 4.5V VGS = 10 V 100 1000 10000 1 12 23 34 45 5 Axis Title 1st line 2nd line 2nd line VGS - Gate-to-Source Vol tage (V) Qg - Total Gate Charge (nC) 2nd line VDS = 25 V, 20 V, and 15 V ID = 30 A SPB80N04S2-H4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (TA = 25 °C, unles s otherwise noted) On-Resistance v s. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current De-Rating 100 1000 10000 0.8 1.1 1.4 1.7 2.0 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Norma lized) TJ - Junction Tem perature (°C) 2nd line ID = 30 A VGS = 10 V VGS = 4.5 V 100 1000 10000 0.02 0.03 0.04 0.05 2468 1 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω VGS - Gate-to-Source Vol tage (V) 2nd line TJ = 25 °C TJ = 125 °C 100 1000 10000 001 0.01 0.1 100 Axis Title 1st line 2nd line 2nd line IS - Source Current (A VSD - Source-to-Drain Voltage (V) 2nd line TJ = 150 °C TJ = 25 °C 100 1000 10000 -1.4 -0.8 -0.2 0.4 1.0 -50 -25 0 25 50 75 100 125 150 175 Axis Title 1st line 2nd line 2nd line VGS(th) - Variance (V) TJ - Temperature (°C) 2nd line ID = 5 mA ID = 250 μA 100 1000 10000 110 115 120 125 -50 -25 0 25 50 75 100 125 150 175 Axis Title 1st line 2nd line 2nd line VDS - Drain-to-Source V oltage (V) TJ - Temperature (°C) 2nd line ID = 250 μA 100 1000 10000 150 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A TC - Case Tem perature (°C) 2nd line SPB80N04S2-H4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

S (TA = 25 °C, u nless otherwise noted) Safe Operatin g Area IDAV vs. Time N ormalized Thermal Transient Impedance, Junction-to-Ambient 100 1000 10000 100 1000 0.1 1 10 100 1000 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A VDS - Drain-to-Source V oltage (V) (1) VGS > minimu m VGS at which RDS(on) is specified IDM limited Limited by RDS(on) (1) TC = 25 °C Sing le pulse BVDSS limited 100 ms, 1 s, 10 s, DC 10 ms 1 ms 100 μsID limited 100 1000 10000 0.00001 0.0001 0.001 0.01 Axis Title 1st line 2nd line 2nd line IDAV (A) Time (s) 2nd li ne 150 °C 25 °C 100 1000 10000 0.1 0.001 0.01 0.1 1 10 100 1000 Axis Title 1st line 2nd line Normaliz ed Effective Transient Thermal Impedance Square Wave P ulse Duration (s) 2nd line 0.1 0.05 0.02 Single pulse Duty Cycle = 0.5 0.2 PDM 1. Duty cycle, D = 2. P er unit base = RthJA = 40 °C/W 3. TJM -T A = PDMZthJA (t) 4. Surface mounted Notes: SPB80N04S2-H4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

S (TA = 25 °C, u nless otherwise noted) Normaliz ed Thermal Transient Impedance, Junction-to-Case Note

• The characteristics shown in the two graphs  - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 100 1000 10000 0.01 0.1 0.0001 0.001 0.01 0.1 1 Axis Title 1st line 2nd line Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) 2nd line 0.1 0.05 0.02 Single pulse Duty Cycle = 0.5 0.2 SPB80N04S2-H4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TO-263 (D2PAK): 3-LEAD Notes 1. Pla ne B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 ca n fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. -A- -B- A A e b E A c L2DL3 L Detail “A” K D3 6

0.010 M A M

DETAIL A (ROTATED 90°) SECTION A-A 0° - 5° M c b INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 c1 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 0.010 BSC 0.254 BSC M - 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 SPB80N04S2-H4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.635 (16.129) Recommended Minimum Pads Dimensions in Inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) SPB80N04S2-H4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

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