SM9926DSK SINOPWER | Alldatasheet

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Ordering and Marking Information N-Channel MOSFET

  • 20V/8A, RDS(ON) =20mW (max.) @ VGS = 4.5V RDS(ON) =29mW (max.) @ VGS = 2.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8
  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. D1 D1 (8) (7) (2) (1) D2D2 (6) (5) (4) (3) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SM9926DS Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500pcs/reel) Assembly Material G : Halogen and Lead Free Device SM9926DS K : XXXXX - Lot Code Assembly Material 9926 XXXXX

www.sinopowersemi.com2 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 V TA=25°C 8 ID* Continuous Drain Current TA=70°C 6.5 IDM* Pulsed Drain Current 32 A IS* Diode Continuous Forward Current 1 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 2 PD* Maximum Power Dissipation TA=70°C 1.28 W RqJA* Thermal Resistance-Junction to Ambient 62.5 °C/W Note : *Surface Mounted on 1in pad area, t £ 10sec. Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V, IDS=250mA 20 - - V VDS=16V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 0.5 0.7 1.1 V IGSS Gate Leakage Current VGS=±10V, VDS=0V - - ±10 mA VGS=4.5V, IDS=8A - 16 20 RDS(ON) a Drain-Source On-State Resistance VGS=2.5V, IDS=6.8A - 21 29 mW VSD a Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.3 V Gate Charge Characteristics b Qg Total Gate Charge - 11.3 17 Qgs Gate-Source Charge - 2.7 - Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=8A - 3.5 - nC

www.sinopowersemi.com3 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 4.5 - W Ciss Input Capacitance - 650 - Coss Output Capacitance - 140 - Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, Frequency=1.0MHz - 135 - pF td(ON) Turn-on Delay Time - 5.2 9.5 Tr Turn-on Rise Time - 13.2 24 td(OFF) Turn-off Delay Time - 40.5 73 Tf Turn-off Fall Time VDD=10V, RL=10W, IDS=1A, VGEN =4.5V, RG=6W - 21.5 39 ns trr Reverse Recovery Time - 19.2 - ns Qrr Reverse Recovery Charge ISD=8A, dISD/dt=100ms - 4.6 - nC Note a : Pulse test ; pulse width £300ms, duty cycle £2%. Note b : Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 Typical Operating Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=4.5V 0.01 0.1 1 10 100 0.01 0.1 100 300ms Rds(on) Limit TA=25 o C 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 60 0.01 0.1 Mounted on 1in pad RqJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transfer Characteristics VGS - Gate - Source Voltage (V) RDS(ON) - On Resistance (m W) Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 1.5V 0 5 10 15 20 25 30 VGS=2.5V VGS=4.5V 1 2 3 4 5 6 7 8 9 10 IDS=8A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA

www.sinopowersemi.com6 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 16mW VGS =4.5V IDS =8A 0.1 Tj=150 o C Tj=25 o C 0 4 8 12 16 20 150 300 450 600 750 900 1050 1200 1350 1500 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 24 VDS =10V IDS =8A

www.sinopowersemi.com7 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014

Package Information

UNIT: mm A A1 A2 L VIEW A 0.25 SEATING PLANE GAUGE PLANE 1.27 5.74 2.2 2.87 0.635 0.8 D e E b SEE VIEW A c h X 45 SEATING PLANE < 4 mils-T- Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. SYMBOL MIN. MAX. 1.75 0.10 0.17 0.25 0.25 A c D E e h L MILLIMETERS b 0.31 0.51 SOP-8 0.25 0.50 0.40 1.27 MIN. MAX. INCHES 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0.010 1.27 BSC 0.050 BSC A2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 - -

www.sinopowersemi.com9 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 12.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8 (mm)

www.sinopowersemi.com10 SM9926DSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.