SM3120NCF SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • 33V/66A, RDS(ON)=11.8mW (max.) @ VGS=10V
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • For Power Tool Switching applications. N-Channel MOSFET Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SM3120NC Handling Code Temperature Range Package Code Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device SM3120NC F : SM3120NC XXXXX XXXXX - Lot Code Assembly Material Top View of TO-220 GDS G S D

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - October, 2015 www.sinopowersemi.com Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage (V GS=0V) Clamped V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IDG Drain-Gate Current (Continuous) ±50 mA IGS Gate-Source Current (Continuous) ±50 IS Diode Continuous Forward Current TC=25°C 30 A ID Continuous Drain Current TC=25°C 66 TC=100°C 42 IDM a Pulsed Drain Current TC=25°C 264 PD Maximum Power Dissipation TC=25°C 104 W TC=100°C 41.6 RqJC Thermal Resistance-Junction to Case Steady State 1.2 °C/W ID Continuous Drain Current TA=25°C 9.2 A TA=70°C 7.2 PD Maximum Power Dissipation TA=25°C 2 W TA=70°C 1.25 RqJA Thermal Resistance-Junction to Ambient Steady State 62.5 °C/W IAS b Avalanche Current, Single pulse L=0.5mH 27 A EAS b Avalanche Energy, Single pulse L=0.5mH 182 mJ Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature T j=25 o C). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - October, 2015 www.sinopowersemi.com Electrical Characteristics (TA = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=1mA 33 - - V IDSS Zero Gate Voltage Drain Current VDS=26V, VGS=0V - - 10 mA TJ=85°C - - 100 VGS(th) Gate Threshold Voltage VDS=VGS, IDS =250mA 2 3 4 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±30 mA RDS(ON) c Drain-Source On-state Resistance V GS=10V, IDS=40A - 9.8 11.8 mW Diode Characteristics VSD c Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time ISD=40A, dlSD/dt=100A/ms - 39 - ns Qrr Reverse Recovery Charge - 56 - nC Dynamic Characteristics d RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 2.5 - W Ciss Input Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 2200 2890 pF Coss Output Capacitance - 270 - Crss Reverse Transfer Capacitance - 142 - td(ON) Turn-on Delay Time VDD=30V, RL=30W, IDS=1A, VGEN =10V, RG=6W - 16 29 ns tr Turn-on Rise Time - 12 22 td(OFF) Turn-off Delay Time - 44 80 tf Turn-off Fall Time - 26 47 Gate Charge Characteristics d Qg Total Gate Charge VDS=20V, VGS=10V, IDS=40A - 41 58 nC Qgs Gate-Source Charge - 12.5 - Qgd Gate-Drain Charge - 11.5 - Note c：Pulse test ; pulse width£300ms, duty cycle £2%. Note d：Guaranteed by design, not subject to production testing.

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - October, 2015 www.sinopowersemi.com Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 100 120 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.1 1 10 100 100 500 300ms 10ms 100ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC : 1.2 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - October, 2015 www.sinopowersemi.com VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On - Resistance (mW) Gate-Source On Resistance 0 1 2 3 4 5 6 120 160 200 5.5V VGS=8,9,10V 0 30 60 90 120 150 180 VGS=10V 4 5 6 7 8 9 10 IDS=40A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - October, 2015 www.sinopowersemi.com VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Typical Operating Characteristics (Cont.) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 9.8mW VGS = 10V IDS = 40A 0.1 100 200 Tj=150 o C Tj=25 o C 0 6 12 18 24 30 36 42 VDS =20V IDS =40A 0 5 10 15 20 25 30 35 500 1000 1500 2000 2500 3000 3500 Frequency=1MHz Crss Coss Ciss

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - October, 2015 www.sinopowersemi.com Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - October, 2015 www.sinopowersemi.com Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - October, 2015 www.sinopowersemi.com Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.