SM3391BSQAC-TRG

SM3391BSQA SINOPWER | Alldatasheet

Document overview

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Technical content

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com Dual P-Channel Enhancement Mode MOSFET Features Pin Description

• -20V/-22A RDS(ON)=19mΩ(max.)@VGS=-4.5V RDS(ON)=27mΩ(max.)@VGS=-2.5V RDS(ON)=42mΩ(max.)@VGS=-1.8V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)

Applications

• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. D1D1D2D2 S1G1S2 DFN3x3B-8_EP2 SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). D2 D2 (6) (5) (4) (3) D1 D1 (8) (7) (2) (1) Pin 1 Ordering and Marking Information P-Channel MOSFET SM3391BS QA : SM3391BXXXXX● XXXXX - Lot Code SM3391BS Assembly Material Handling Code Temperature Range Package Code Package Code QA : DFN3x3B-8_EP2 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C -8 * A ID Continuous Drain Current TC=25°C -22 * ATC=100°C -14 * IDM a Pulsed Drain Current TC=25°C -32 PD Maximum Power Dissipation TC=25°C 14.7 W TC=100°C 5.9 RqJC Thermal Resistance-Junction to Case 8.5 °C/W ID Continuous Drain Current TA=25°C -6.4 A TA=70°C -5.1 PD Maximum Power Dissipation TA=25°C 1.2 W TA=70°C 0.76 RqJA c Thermal Resistance-Junction to Ambient Steady state 105 °C/W IAS b Avalanche Current, Single pulse L=0.5mH -9 A EAS b Avalanche Energy, Single pulse L=0.5mH 20 mJ Note *：Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation current is 8A. Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature Tj=25 o C). Note c：Surface Mounted on 1in pad area.

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -20 - - V IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V - - -1 mA TJ=85°C - - -30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -0.5 - -1.0 V IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±10 mA RDS(ON) d Drain-Source On-state Resistance VGS=-4.5V, IDS=-10A - 15 19 mW VGS=-2.5V, IDS=-4.5A - 20 27 mW VGS=-1.8V, IDS=-2.5A - 28 42 mW Diode Characteristics VSD d Diode Forward Voltage ISD=-1A, VGS=0V - -0.7 -1 V trr Reverse Recovery Time ISD=-10A, dlSD/dt=100A/ms - 30 - ns Qrr Reverse Recovery Charge - 12 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 8 - W Ciss Input Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz - 1620 2100 pFCoss Output Capacitance - 320 - Crss Reverse Transfer Capacitance - 290 - td(ON) Turn-on Delay Time VDD=-10V, RL=10W, IDS=-1A, VGEN=-10V, RG=1W - 9 16 ns tr Turn-on Rise Time - 14 25 td(OFF) Turn-off Delay Time - 27 49 tf Turn-off Fall Time - 120 216 Gate Charge Characteristics e Qg Total Gate Charge VDS=-10V, VGS=-4.5V, IDS=-10A - 18 25 nCQgs Gate-Source Charge - 2.7 - Qgd Gate-Drain Charge - 6 - Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing.

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) 0 20 40 60 80 100 120 140 1600 TC=25 o C,VG=-4.5V 0 20 40 60 80 100 120 140 1600 TC=25 o C Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) ID - Drain Current (A) Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) 1E-6 1E-5 1E-4 1E-3 0.01 0.11E-4 1E-3 0.01 0.1 RqJC :8.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com Typical Operating Characteristics(Cont.) Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) 1E-4 1E-3 0.01 0.1 1 10 100 10001E-3 0.01 0.1 Mounted on 1in pad RqJA : 105 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) 0 8 16 24 32 400 VGS=-1.8V VGS=-4.5V VGS=-2.5V 0 1 2 3 4 50 -2.5V -2V -1V -1.5V -7,-8,-9,-10V -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ)

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com6 Typical Operating Characteristics(Cont.) Gate-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) -50 -25 0 25 50 75 100 125 1500.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =-250mA 1 2 3 4 5 6 7 8 90 IDS=-10A -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Normalized Threshold Voltage Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj=150 o C Tj=25 o C -50 -25 0 25 50 75 100 125 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 15mW VGS = -4.5V IDS = -10A Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) -IS - Source Current (A)

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com7 Typical Operating Characteristics(Cont.) Capacitance Gate Charge C - Capacitance (pF) 0 3 6 9 12 15 180 VDS= -10V IDS= -10A 0 4 8 12 16 200 300 600 900 1200 1500 1800 2100 2400 2700 Frequency=1MHz Crss Coss Ciss -VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) Transfer Characteristics -ID - Drain Current (A) 0 1 2 3 40 Tj=125 o C Tj=25 o C -VGS - Gate-Source Voltage (V)

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com8 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DUT 0.01W VDD VDS L IL RG tp EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com9 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

Copyright © Sinopower Semiconductor, Inc. Rev. A.2 - April, 2018 www.sinopowersemi.com10 Classification Profile

Copyright © Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Table 2. Pb-free Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.