SM3390BSQA SINOPWER | Alldatasheet

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  • Pico-Projector. Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
  • -30V/-15A, RDS(ON) = 31mW (max.) @ VGS =-10V RDS(ON) = 47mW (max.) @ VGS =-4.5V
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • Lead Free Available (RoHS Compliant) DFN3x3B-8_EP2 SM3390BS Handling Code Temperature Range Package Code Package Code QA : DFN3x3B-8_EP2 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3390BS QA : SM 3390B XXXXX - Lot Code Assembly Material XXXXX Top View Bottom View Pin 1 D1D1D2D2 S1G1S2 P-Channel MOSFET D2 D2 (6) (5) (4) (3) D1 D1 (8) (7) (2) (1)

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C -2 A ID Continuous Drain Current TC=25°C -15 A TC=100°C -10 IDM a Pulsed Drain Current TC=25°C -60 PD Maximum Power Dissipation TC=25°C 12.5 W TC=100°C 5 RqJC Thermal Resistance-Junction to Case 10 °C/W ID Continuous Drain Current TA=25°C -4.9 A TA=70°C -3.9 PD Maximum Power Dissipation TA=25°C 1.2 W TA=70°C 0.76 RqJA c Thermal Resistance-Junction to Ambient Steady state 105 °C/W IAS b Avalanche Current, Single pulse L=0.5mH -11 A EAS b Avalanche Energy, Single pulse L=0.5mH 30 mJ Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Note c：Surface Mounted on 1in2 pad area. Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -30 - - V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 mA TJ=85°C - - -30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -1.3 -1.8 -2.3 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 mA RDS(ON) d Drain-Source On-state Resistance VGS=-10V, IDS=-7A - 25 31 mW VGS=-4.5V, IDS=-4A - 35 47 mW Diode Characteristics VSD d Diode Forward Voltage ISD=-1A, VGS=0V - -0.75 -1.1 V trr Reverse Recovery Time ISD=-7A, dlSD/dt=100A/ms - 20 - ns Qrr Reverse Recovery Charge - 10 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 12 - W Ciss Input Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz - 750 975 pF Coss Output Capacitance - 142 - Crss Reverse Transfer Capacitance - 102 - td(ON) Turn-on Delay Time VDD=-15V, RL=15W, IDS=-1A, VGEN=-10V, RG=1W - 9 16 ns tr Turn-on Rise Time - 11 20 td(OFF) Turn-off Delay Time - 55 99 tf Turn-off Fall Time - 34 61 Gate Charge Characteristics e Qg Total Gate Charge VDS=-15V, VGS=-4.5V, IDS=-7A - 8 - nC Qg Total Gate Charge VDS=-15V, VGS=-10V, IDS=-7A - 17 24 Qgs Gate-Source Charge - 2 - Qgd Gate-Drain Charge - 4 - Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=-10V 0.1 1 10 100 0.1 100 10ms 300ms 100ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC :10 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 Typical Operating Characteristics (Cont.) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance -ID - Drain Current (A) Safe Operation Area -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) 0.01 0.1 1 10 100 0.01 0.1 300ms Rds(on) Limit TA=25 O C 10ms 1ms 100ms DC 1E-41E-30.01 0.1 1 10 1001000 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 105 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 1 2 3 4 5 -5V 3.5V -4V -2.5V -3V -4.5V 0 8 16 24 32 40 VGS=-4.5V VGS=-10V

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 Typical Operating Characteristics (Cont.) Gate-Source On Resistance -VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) 2 3 4 5 6 7 8 9 10 IDS=-7A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =-250mA -50 -25 0 25 50 75 100125150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 RON@Tj=25 o C: 25mW VGS = -10V IDS = -7A 0.1 Tj=150 o C Tj=25 o C

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 -VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) Transfer Characteristics ID - Drain Current (A) -VGS - Gate-Source Voltage (V) 0 5 10 15 20 25 30 100 200 300 400 500 600 700 800 900 1000 1100 Frequency=1MHz Crss Coss Ciss 0 3 6 9 12 15 18 VDS= -15V IDS= -7A 1 2 3 4 5 6 Tj=125 o C Tj=25 o C

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 Avalanche Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp Switching Time Test Circuit and Waveforms td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2016 Classification Profile

www.sinopowersemi.com11Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.