SM3116NSUC SINOPWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
Applications
- Power Management in Desktop Computer or DC/DC Converters.
- 30V/60A, RDS(ON)=5.7mΩ (Max.) @ VGS=10V RDS(ON)=8mΩ (Max.) @ VGS=4.5V
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS Compliant)
- 100% UIS + Rg Tested N-Channel MOSFET Top View of TO-251S G S D Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). S D G SM3116NS Handling Code Temperature Range Package Code Package Code UC : TO-251S Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device SM3116NS UC : SM3116N XXXXX XXXXX - Lot Code Assembly Material
www.sinopowersemi.com2Copyright Sinopower Semiconductor, Inc. Rev. A.4 - July, 2015 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 20 A TC=25°C 140 IDP 300μs Pulse Drain Current Tested TC=100°C 90 A TC=25°C 60* ID a Continuous Drain Current TC=100°C 48 A TC=25°C 50 PD Maximum Power Dissipation TC=100°C 20 W RθJC Thermal Resistance-Junction to Case Steady State 2.5 °C/W t ≤ 10s 15 RθJA Thermal Resistance-Junction to Ambient Steady State 45 °C/W IAS b Avalanche Current, Single pulse (L=0.5mH) 20 A EAS b Avalanche Energy, Single pulse (L=0.5mH) 100 mJ Note a：* Current limited by bond wire. Note b：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature T j=25 o C). Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 µA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.5 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON) c Drain-Source On-state Resistance VGS=10V, IDS=40A - 4.7 5.7 mΩ TJ=125°C - 6.9 - VGS=4.5V, IDS=20A - 6 8 Gfs Forward Transconductance VDS=5V, IDS=40A - 95 - S
www.sinopowersemi.com3Copyright Sinopower Semiconductor, Inc. Rev. A.4 - July, 2015 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Characteristics VSD c Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.1 V trr Reverse Recovery Time IDS=40A, dlSD/dt=100A/µs - 26 - ns ta Charge Time - 15 - tb Discharge Time - 11 - Qrr Reverse Recovery Charge - 9 - nC Dynamic Characteristics d RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.5 - Ω Ciss Input Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz - 1700 - pF Coss Output Capacitance - 270 - Crss Reverse Transfer Capacitance - 175 - td(ON) Turn-on Delay Time VDD=15V, RL=15Ω , IDS=1A, VGEN=10V, RG=6Ω - 15 28 ns tr Turn-on Rise Time - 13 24 td(OFF) Turn-off Delay Time - 39 71 tf Turn-off Fall Time - 10 32 Gate Charge Characteristics d Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=40A - 14 - nC Qg Total Gate Charge VDS=15V, VGS=10V, IDS=40A - 28 39 Qgth Threshold Gate Charge - 3 - Qgs Gate-Source Charge - 3.7 - Qgd Gate-Drain Charge - 7.9 - Note c ：Pulse test ; pulse width≤300µs, duty cycle ≤2%. Note d ：Guaranteed by design, not subject to production testing.
www.sinopowersemi.com4Copyright Sinopower Semiconductor, Inc. Rev. A.4 - July, 2015 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature ID - Drain Current (A) Thermal Transient Impedance Normalized Transient Thermal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 0 20 40 60 80 100120140160 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=10V 0.01 0.1 1 10 100 0.1 100 400 Rds(on) Limit TC=25 O C 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RθJA :15 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5
www.sinopowersemi.com5Copyright Sinopower Semiconductor, Inc. Rev. A.4 - July, 2015 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 100 120 140 3.5V -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA 0 20 40 60 80 100 120 140 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=40A
www.sinopowersemi.com6Copyright Sinopower Semiconductor, Inc. Rev. A.4 - July, 2015 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 4.8mΩ VGS = 10V IDS = 40A 0.1 100 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 400 800 1200 1600 2000 2400 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 24 28 VDS= 15V IDS= 40A
www.sinopowersemi.com7Copyright Sinopower Semiconductor, Inc. Rev. A.4 - July, 2015 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%
www.sinopowersemi.com8Copyright Sinopower Semiconductor, Inc. Rev. A.4 - July, 2015 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.
www.sinopowersemi.com9Copyright Sinopower Semiconductor, Inc. Rev. A.4 - July, 2015 Classification Profile
www.sinopowersemi.com10Copyright Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.
- Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.