SM3382EHQG

SM3382EHQG SINOPWER | Alldatasheet

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Technical content

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Dual N-Channel Enhancement Mode MOSFET Features Pin Description

• Channel 1 30V/18A RDS(ON)=11.4mΩ(max.)@VGS=10V RDS(ON)=18.2mΩ(max.)@VGS=4.5V
• Channel 2 30V/30A RDS(ON)=6.2mΩ(max.)@VGS=10V RDS(ON)=10.7mΩ(max.)@VGS=4.5V
• 100% UIS + Rg Tested
• ESD Protection
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)

Applications

• Secondary Side Synchronous Rectification
• DC-DC Converter
• Motor Control
• Load Switching G1D1D1D1 G2S2S2S2 DFN3x3E-8_EP2 SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). S2 (5) (8) G1 (1) (2) (3) S1/D2 (4) (6)(7) S1/D2 (Pin 9) Ordering and Marking Information N-Channel MOSFET SM3382EH QG : SM 3382E XXXXX● XXXXX - Lot Code SM3382EH Assembly Material Handling Code Temperature Range Package Code Package Code QG : DFN3x3E-8_EP2 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Symbol Parameter Channel 1 Channel 2 Unit Common Ratings VDSS Drain-Source Voltage 30 30 V VGSS Gate-Source Voltage ±20 ±20 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 7 9 A ID Continuous Drain Current TC=25°C 18 a a A TC=100°C 18 a IDM b Pulse Drain Current Tested TC=25°C 72 120 A PD Maximum Power Dissipation TC=25°C 16 20.8 W TC=100°C 6.4 8.33 RqJC Thermal Resistance-Junction to Case Steady State 7.8 6 °C/W ID Continuous Drain Current TA=25°C 8 10.5 A TA=70°C 6.5 8.4 IDM b Pulse Drain Current Tested TA=25°C 32 43 A PD Maximum Power Dissipation TA=25°C 1.16 1.16 W TA=70°C 0.74 0.74 RqJA c Thermal Resistance-Junction to Ambient t ≤ 10s 60 60 °C/W Steady State 108 108 IAS d Avalanche Current, Single pulse L=0.1mH 15.6 20.4 A EAS d Avalanche Energy, Single pulse L=0.1mH 12.2 20.8 mJ Note a：Max. continuous current is limited by bonding wire. Note b：Pulse width limited by max. junction temperature. Note c：Surface mounted on 1in pad area, steady state t = 999s. Note d：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature Tj=25 o C).

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Channel 1 Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.3 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 mA RDS(ON) e Drain-Source On-state Resistance VGS=10V, IDS=10A - 9.5 11.4 mWTJ=125°C - 13.5 - VGS=4.5V, IDS=8A - 14 18.2 Gfs Forward Transconductance VDS=5V, IDS=10A - 10.7 - S Diode Characteristics VSD e Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.1 V trr Reverse Recovery Time ISD=10A, dlSD/dt=100A/ms - 10 - nsta Charge Time - 5 - tb Discharge Time - 4.8 - Qrr Reverse Recovery Charge - 1.5 - nC Dynamic Characteristics f RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.2 4.4 W Ciss Input Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz - 495 644 pFCoss Output Capacitance - 290 - Crss Reverse Transfer Capacitance - 25 - td(ON) Turn-on Delay Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W - 10 18 ns tr Turn-on Rise Time - 8.6 16 td(OFF) Turn-off Delay Time - 18.4 34 tf Turn-off Fall Time - 10.2 19 Gate Charge Characteristics f Qg Total Gate Charge VDS=15V, VGS=10V, IDS=10A - 8.6 12 nC Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=10A - 4.1 - Qgth Threshold Gate Charge - 0.8 - Qgs Gate-Source Charge - 1.6 - Qgd Gate-Drain Charge - 1.3 - Note e：Pulse test ; pulse width≤300ms, duty cycle≤2%. Note f：Guaranteed by design, not subject to production testing.

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Channel 2 Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.3 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 mA RDS(ON) e Drain-Source On-state Resistance VGS=10V, IDS=12A - 5.2 6.2 mWTJ=125°C - 8 - VGS=4.5V, IDS=9A - 8.2 10.7 Gfs Forward Transconductance VDS=5V, IDS=8A - 13.3 - S Diode Characteristics VSD e Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.1 V trr Reverse Recovery Time ISD=12A, dlSD/dt=100A/ms - 20.6 - nsta Charge Time - 9.6 - tb Discharge Time - 11 - Qrr Reverse Recovery Charge - 8 - nC Dynamic Characteristics f RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.8 3.6 W Ciss Input Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz - 735 956 pFCoss Output Capacitance - 400 - Crss Reverse Transfer Capacitance - 37 - td(ON) Turn-on Delay Time VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W - 11 20 ns tr Turn-on Rise Time - 8.8 16 td(OFF) Turn-off Delay Time - 20 36 tf Turn-off Fall Time - 16 29 Gate Charge Characteristics f Qg Total Gate Charge VDS=15V, VGS=10V, IDS=12A - 11.8 16.5 nC Qg Total Gate Charge VDS=15V, VGS=4.5V, IDS=12A - 5.5 - Qgth Threshold Gate Charge - 1.3 - Qgs Gate-Source Charge - 2.5 - Qgd Gate-Drain Charge - 1.5 - Note e：Pulse test ; pulse width≤300ms, duty cycle≤2%. Note f：Guaranteed by design, not subject to production testing.

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Channel 1 Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) 0 20 40 60 80 100 120 140 1600 TC=25 o C,VG=10V 0 20 40 60 80 100 120 140 1600 TC=25 o C Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) ID - Drain Current (A) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 1E-6 1E-5 1E-4 1E-3 0.01 0.051E-3 0.01 0.1 RqJC :7.8 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Channel 1 Typical Operating Characteristics(Cont.) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 1E-4 1E-3 0.01 0.1 1 10 100 10001E-3 0.01 0.1 Mounted on 1in pad RqJA :108 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance Output Characteristics Drain-Source On Resistance ID - Drain Current (A) 0 10 20 30 40 503 VGS=10V VGS=4.5V 2.5V 3.5V 4.5V VGS=5,6,7,8,9,10V VDS - Drain - Source Voltage (V) ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ)

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com7 Channel 1 Typical Operating Characteristics(Cont.) Gate-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) -50 -25 0 25 50 75 100 125 1500.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA 2 3 4 5 6 7 8 9 105 IDS=10A VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Normalized Threshold Voltage Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj=150 o C Tj=25 o C -50 -25 0 25 50 75 100 125 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 9.5mW VGS =10V IDS =10A Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) IS - Source Current (A)

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com8 Channel 1 Typical Operating Characteristics(Cont.) Capacitance Gate Charge C - Capacitance (pF) VDS=15V IDS=10A 0 5 10 15 20 25 300 100 200 300 400 500 600 700 800 Frequency=1MHz Crss Coss Ciss VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Transfer Characteristics ID - Drain Current (A) 0 1 2 3 4 5 60 Tj=125 o C Tj=25 o C VGS - Gate-Source Voltage (V)

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Channel 2 Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) 0 20 40 60 80 100 120 140 1600 TC=25 o C,VG=10V 0 20 40 60 80 100 120 140 1600 TC=25 o C Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) ID - Drain Current (A) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 1E-6 1E-5 1E-4 1E-3 0.01 0.11E-3 0.01 0.1 RqJC :6 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Channel 2 Typical Operating Characteristics(Cont.) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 1E-4 1E-3 0.01 0.1 1 10 100 10001E-3 0.01 0.1 Mounted on 1in pad RqJA : 108 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance Output Characteristics Drain-Source On Resistance ID - Drain Current (A) 0 20 40 60 80 1000 VGS=10V VGS=4.5V 100 120 4.5V 2.5V 3.5V VGS=6,7,8,9,10V VDS - Drain - Source Voltage (V) ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ)

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com11 Channel 2 Typical Operating Characteristics(Cont.) Gate-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) -50 -25 0 25 50 75 100 125 1500.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA 2 3 4 5 6 7 8 9 100 IDS=12A VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Normalized Threshold Voltage Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance 100 Tj=150 o C Tj=25 o C -50 -25 0 25 50 75 100 125 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 5.2mW VGS = 10V IDS = 12A Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) IS - Source Current (A)

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com12 Channel 2 Typical Operating Characteristics(Cont.) Capacitance Gate Charge C - Capacitance (pF) 0 2 4 6 8 10 120 VDS=15V IDS=12A 0 5 10 15 20 25 300 100 200 300 400 500 600 700 800 900 1000 1100 Frequency=1MHz Crss Coss Ciss VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Transfer Characteristics ID - Drain Current (A) 1 2 3 4 5 60 100 Tj=125 o C Tj=25 o C VGS - Gate-Source Voltage (V)

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com13 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com14 Disclaimer Sinopower Semiconductor Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com15 Classification Profile

Copyright © Sinopower Semiconductor Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Table 2. Pb-free Process – Classification Temperatures (Tc) Sinopower Semiconductor Inc.