SM9435PSK SINOPWER | Alldatasheet
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Technical content
Features
Applications
- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Pin Description Ordering and Marking Information P-Channel MOSFET
- -30V/-5.4A , RDS(ON)=58mΩ (max.) @ VGS=-10V RDS(ON)=86mΩ (max.) @ VGS=-4.5V
- 100% UIS Tested
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS Compliant)
- ESD Protection Top View of SOP − 8 Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). S S S G D D D D G S D D ( 5,6,7,8 ) (4) (1, 2, 3) DD SS SM9435PS Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Assembly Material G: Halogen and Lead Free Device SM9435PS K : XXXXX - Lot Code Assembly Material 9435 XXXXX
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 V ID* Continuous Drain Current -5.4 IDM* Pulsed Drain Current VGS=-10V -21 A IS* Diode Continuous Forward Current -2 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 2.5 PD* Maximum Power Dissipation TA=100°C 1 W t ≤ 10sec 50 RθJA* Thermal Resistance-Junction to Ambient Steady state 80 °C/W Note *：Surface Mounted on 1in 2 pad area, t ≤ 10sec.
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS =0V, IDS =-250µA -30 - - V VDS=-24V, VGS=0V - - -1 IDSS Zero Gate Voltage Drain Current Tj=85°C - - -30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1 -1.5 -2.3 V IGSS Gate Leakage Current VGS =±20V, VDS=0V - - ±10 µA VGS =-10V, IDS=-5.4A - 46 58 RDS(ON) a Drain-Source On-state Resistance VGS =-4.5V, IDS=-2A - 64 86 mΩ VSD a Diode Forward Voltage ISD=-1A, VGS=0V - - -1.3 V Gate Charge Characteristics b Qg Total Gate Charge - 13 - Qgs Gate-Source Charge - 1.3 - Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-5.4A - 3.1 - nC Dynamic Characteristics b Ciss Input Capacitance - 642 - Coss Output Capacitance - 76 - Crss Reverse Transfer Capacitance VGS =0V, VDS=-15V, Frequency=1.0MHz - 66 - pF td(ON) Turn-on Delay Time - 8 - Tr Turn-on Rise Time - 13 - td(OFF) Turn-off Delay Time - 26 - Tf Turn-off Fall Time VDD=-15V, RL=15Ω , IDS=-1A, VGEN=-10V, RG=6Ω - 7 - ns trr Reverse Recovery Time - 13 - ns Qrr Reverse Recovery Charge IDS=-5.4A, dlSD/dt=100A/µs - 7 - nC Note a：Pulse test; pulse width ≤300µs, duty cycle ≤2%. Note b：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C unless otherwise noted)
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com Typical Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=-10V 0.01 0.1 1 10 100300 0.01 0.1 100 Rds(on) Limit TA=25 o C 10ms 300µs 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 1030 0.01 0.1 Mounted on 1in pad RθJA :50 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics Gate-Source On Resistance -VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mΩ ) Typical Characteristics (Cont.) -2.5V -2V -3V -3.5V 0 4 8 12 16 20 100 VGS=-10V VGS=-4.5V 2 3 4 5 6 7 8 9 10 100 120 140 IDS= -5.4A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =-250µA
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 46mΩ VGS = -10V IDS = -5.4A 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 100 200 300 400 500 600 700 800 900 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 14 VDS= -15V IDS= -5.4A
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com
Package Information
UNIT: mm A A1 A2 L VIEW A 0.25 SEATING PLANE GAUGE PLANE 1.27 5.74 2.2 2.87 0.635 0.8 D e E b SEE VIEW A c h X 45 SEATING PLANE < 4 mils-T- Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. SYMBOL MIN. MAX. 1.75 0.10 0.17 0.25 0.25 A c D E e h L MILLIMETERS b 0.31 0.51 SOP-8 0.25 0.50 0.40 1.27 MIN. MAX. INCHES 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0.010 1.27 BSC 0.050 BSC A2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 - -
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 12.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8 (mm)
Copyright Sinopower Semiconductor, Inc. Rev. A.5 - August, 2015 www.sinopowersemi.com Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile
Copyright Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.
- Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.