SM8A01NSF SINOPWER | Alldatasheet

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Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com N-Channel Enhancement Mode MOSFET Features Pin Description

  • 800V/13A, RDS(ON)=0.38Ω(max.)@VGS=10V VDS@Tj, max=930(typ.)
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • Avalanche Rated
  • Lead Free and Green Devices Available (RoHS Compliant)

Applications

  • AC/DC Power Conversion in Switched Mode Power Supplies (SMPS).
  • Uninterruptible Power Supply (UPS).
  • Adapter. GDS TO-220 TO-220FP SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). G (1) S (3) D (2) GDS Ordering and Marking Information SM8A01NS Handling Code Temperature Range Package Code Package Code F : TO-220 FP : TO-220FP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube (50ea/tube) Assembly Material G : Halogen and Lead Free Device SM8A01NS F/FP : SM8A01NS XXXXX XXXXX - Lot Code Assembly Material N-Channel MOSFET

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 800 V VGSS Gate-Source Voltage ±30 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 13 a A IDP Pulse Drain Current Tested TC=25°C 40 a A ID Continuous Drain Current TC=25°C 13 a A TC=100°C 9 a PD Maximum Power Dissipation for TO-220 TC=25°C 208 W TC=100°C 83 PD Maximum Power Dissipation for TO-220FP TC=25°C 35.5 TC=100°C 14.2 RqJC Thermal Resistance-Junction to Case for TO-220 0.6 °C/WRqJC Thermal Resistance-Junction to Case for TO-220FP 3.5 RqJA Thermal Resistance-Junction to Ambient 62.5 Drain-Source Avalanche Ratings dv/dt b MOSFET dv/dt ruggedness 50 V/ns EAS c Avalanche Energy, Single Pulsed 250 mJ IAR d Avalanche Current 2.5 A EAR d Repetitive Avalanche Energy 0.6 mJ Note a：Limited by maximum junction temperature. Note b：VDS=640V, ID=13A. Note c：ID=2.5A, VDD=50V, Tj=25°C. Note d：Repetitive Rating : Pulse width limited by maximum junction temperature.

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 800 - - V TJ=150°C - 930 - IDSS Zero Gate Voltage Drain Current VDS=640V, VGS=0V - - 1 mA TJ=150°C - - 200 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 2.5 3.5 4.5 V IGSS Gate Leakage Current VGS=±30V, VDS=0V - - ±100 nA RDS(ON) e Drain-Source On-state Resistance VGS=10V, IDS=8A - 0.33 0.38 W Diode Characteristics VSD e Diode Forward Voltage ISD=13A, VGS=0V - 0.87 1.3 V trr Reverse Recovery Time ISD=13A, VR=480V dlSD/dt=100A/ms - 385 - ns Qrr Reverse Recovery Charge - 7 - mC Irm Peak Reverse Recovery Current - 37 - A Dynamic Characteristics f RG Gate Resistance VGS=0V,VDS=0V, F=1MHz - 1.45 - W Ciss Input Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz - 1820 2500 pFCoss Output Capacitance - 745 - Crss Reverse Transfer Capacitance - 45 - td(ON) Turn-on Delay Time VDD=400V, RL=30W, IDS=13A, VGEN=10V, RG=6W - 16 - ns Tr Turn-on Rise Time - 45 - td(OFF) Turn-off Delay Time - 44 - Tf Turn-off Fall Time - 34 - Gate Charge Characteristics f Qg Total Gate Charge VDS=640V, VGS=10V, IDS=13A - 55 75 nCQgs Gate-Source Charge - 11 - Qgd Gate-Drain Charge - 26 - Note e：Pulse test ; pulse width≤300ms, duty cycle≤2%. Note f：Guaranteed by design, not subject to production testing.

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com Typical Operating Characteristics Power Dissipation : TO-220 Power Dissipation : TO-220FP Ptot - Power (W) 0 20 40 60 80 100 120 140 1600 TC=25 o C 0 20 40 60 80 100 120 140 1600 100 150 200 250 TC=25 o C Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Ptot - Power (W) Safe Operation Area : TO-220 Safe Operation Area : TO-220FP ID - Drain Current (A) VDS - Drain - Source Voltage (V) VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com Typical Operating Characteristics(Cont.) Thermal Transient Impedance:TO-220 Thermal Transient Impedance:TO-220FP Normalized Transient Thermal Resistance 1E-4 1E-3 0.01 0.1 1 10 1001E-3 0.01 0.1 Mounted on minimum pad RqJA :62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 1E-4 1E-3 0.01 0.1 1 10 1001E-3 0.01 0.1 Mounted on minimum pad RqJA :62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 SquareWave PulseDuration (sec) SquareWave PulseDuration (sec) Normalized Transient Thermal Resistance Drain Current Output Characteristics ID - Drain Current (A) 0 5 10 15 20 25 300 VGS=8V,10,15V 0 20 40 60 80 100 120 140 1600 TC=25 o C,VG=10V Tj - Junction Temperature (°C) VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com6 Typical Operating Characteristics(Cont.) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance 100 Tj=150 o C Tj=25 o C -50 -25 0 25 50 75 100 125 1500.0 0.5 1.0 1.5 2.0 2.5 3.0 RON@Tj=25 o C: 0.33W VGS = 10V IDS = 8A Tj - Junction Temperature (°C) VSD - Source -Drain Voltage (V) IS - Source Current (A) Capacitance Gate Charge C - Capacitance (pF) 0 10 20 30 40 50 600 VDS=640V IDS=13A 5 10 15 20 25 30 35 401 100 1000 10000 Frequency=1MHz Crss Coss Ciss VDS - Drain - Source Voltage (V) QG -Gate Charge (nC) VGS -Gate-source Voltage (V)

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com7 Typical Operating Characteristics(Cont.) Drain-Source On Resistance BVDSS vs Junction Temperature RDS(ON) - On - Resistance (mΩ) -50 -25 0 25 50 75 100 125 1500.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA 0 5 10 15 20 25 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS=10V ID -Drain Current (A) VSD - Source -Drain Voltage (V) Normalized Breakdown Voltage Transfer Characteristics ID - Drain Current (A) 2 3 4 5 6 7 8 9 100.1 100 Tj=150 o C Tj=-55 o C Tj=25 o C VGS - Gate-Source Voltage (V)

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com8 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com9 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

Copyright © Sinopower Semiconductor, Inc. Rev. A.4 - January, 2018 www.sinopowersemi.com10 Classification Profile

Copyright © Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Table 2. Pb-free Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.