SM8008NSKC-TRG

SM8008NSK SINOPWER | Alldatasheet

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Ordering and Marking Information N-Channel MOSFET

• 80V/8A, RDS(ON)= 29mW(max.) @ VGS= 10V RDS(ON)= 34mW(max.) @ VGS= 4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 SM8008NS Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM8008NS K : 8008 XXXXX XXXXX - Lot Code Assembly Material G S D D S S D D ( 5,6,7,8 ) (4) (1, 2, 3) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). S S S G D D D D
• LCD Application System.
• LED TV Backlight Module.

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 80 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TA=25°C 4 A TA=25°C 8 ID Continuous Drain Current TA=70°C 6.3 IDM a Pulsed Drain Current TA=25°C 32 A TA=25°C 3.5 PD Maximum Power Dissipation TA=70°C 2.2 W t £ 10s 35 °C/W RqJA c Thermal Resistance-Junction to Ambient Steady State 70 °C/W IAS b Avalanche Current, Single pulse (L=0.5mH) 14 A EAS b Avalanche Energy, Single pulse (L=0.5mH) 49 mJ Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature Tj=25 oC). Note c：Surface Mounted on 1in pad area.

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 80 - - V VDS=64V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.5 2 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=8A - 24 29 mW RDS(ON) d Drain-Source On-state Resistance VGS=4.5V, IDS=7A - 26 34 mW Diode Characteristics VSD d Diode Forward Voltage ISD=4A, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time - 28 - ns Qrr Reverse Recovery Charge ISD=8A, dlSD/dt=100A/ms - 35 - nC Dynamic Characteristics e RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 2.5 - W Ciss Input Capacitance - 1450 1900 Coss Output Capacitance - 105 - Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 55 - pF td(ON) Turn-on Delay Time - 14 26 tr Turn-on Rise Time - 7 13 td(OFF) Turn-off Delay Time - 42 76 tf Turn-off Fall Time VDD=30V, RL=30W, IDS=1A, VGEN =10V, RG=6W - 11 20 ns Gate Charge Characteristics e Qg Total Gate Charge VDS=40V, VGS=4.5V, IDS=8A - 13 - Qg Total Gate Charge - 30 42 Qgs Gate-Source Charge - 6 - Qgd Gate-Drain Charge VDS=40V, VGS=10V, IDS=8A - 6 - nC Note d：Pulse test ; pulse width £300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature ID - Drain Current (A) Thermal Transient Impedance Normalized Transient Thermal Resistance Square Wave Pulse Duration (sec) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=10V 0.01 0.1 1 10 100 800 0.01 0.1 100 300ms 1ms 10ms 100ms DC Rds(on) Limit TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 60 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 35 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) 2.5V 0 5 10 15 20 25 30 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=8A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain-Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 24mW VGS = 10V IDS = 8A 0.1 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 300 600 900 1200 1500 1800 2100 Frequency=1MHz Crss Coss Ciss 0 5 10 15 20 25 300 VDS=40V IDS=8A

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013

Package Information

UNIT: mm A A1 A2 L VIEW A 0.25 SEATING PLANE GAUGE PLANE 1.27 5.74 2.2 2.87 0.635 0.8 D e E b SEE VIEW A c h X 45 SEATING PLANE < 4 mils-T- Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. SYMBOL MIN. MAX. 1.75 0.10 0.17 0.25 0.25 A c D E e h L MILLIMETERS b 0.31 0.51 SOP-8 0.25 0.50 0.40 1.27 MIN. MAX. INCHES 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0.010 1.27 BSC 0.050 BSC A2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 - -

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 12.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8 (mm) Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1

www.sinopowersemi.com Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.