SM7002NSAN SINOPWER | Alldatasheet

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Ordering and Marking Information

  • 60V/0.45A , RDS(ON)=2.2W(max.) @ VGS=10V RDS(ON)=2.6W(max.) @ VGS=4.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
  • High Speed Switching.
  • Analog Switching Application. Top View of SOT-23N N-Channel MOSFET D G S G S D
  • ESD Protection : HBM=(+/-)1600V MM=(+/-)100V SM7002NS Handling Code Temperature Range Package Code Package Code AN : SOT-23N Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM7002NS AN : A02XX XX - Lot Code Assembly Material

www.sinopowersemi.com2 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TA=25°C 0.4 A ID Continuous Drain Current TA=25°C 0.45 A TA=70°C 0.36 IDM a Pulsed Drain Current TA=25°C 1 A PD Maximum Power Dissipation TA=25°C 0.83 W TA=70°C 0.53 RqJA b Thermal Resistance-Junction to Ambient Steady State 150 °C/W Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in pad area.

www.sinopowersemi.com3 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 60 - - V IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V - - 1 mA TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250mA 1 2 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 mA RDS(ON) d Drain-Source On-state Resistance VGS=10V, IDS=100mA - 1.8 2.2 W VGS=4.5V, IDS=50mA - 2 2.6 W Diode Characteristics VSD c Diode Forward Voltage ISD=100mA, VGS=0V - 0.8 1.3 V trr Reverse Recovery Time ISD=1A, dlSD/dt=100A/ms - 13 - ns Qrr Reverse Recovery Charge - 8 - nC Dynamic Characteristics c Ciss Input Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 24 32 pF Coss Output Capacitance - 5.5 - Crss Reverse Transfer Capacitance - 2.5 - td(ON) Turn-on Delay Time VDD=30V, RL=300W, IDS=0.1A, VGEN=10V, RG=6W - 3 6 ns tr Turn-on Rise Time - 7 13 td(OFF) Turn-off Delay Time - 10 18 tf Turn-off Fall Time - 12 22 Gate Charge Characteristics d Qg Total Gate Charge VDS=30V, VGS=10V, IDS=1A - 1.6 2.3 nC Qgs Gate-Source Charge - 0.6 - Qgd Gate-Drain Charge - 0.1 - Note c：Pulse test ; pulse width£300ms, duty cycle £2%. Note d：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C unless otherwise noted)

www.sinopowersemi.com4 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 Typical Operating Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Thermal Transient Impedance Square Wave Pulse Duration (sec) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C 0 20 40 60 80 100120140160 0.0 0.1 0.2 0.3 0.4 0.5 TA=25 o C,VG=10V 0.01 0.1 1 10 100 500 1E-3 0.01 0.1 DC 300ms 1ms Rds(on) Limit TA=25 O C 10ms 100ms 1E-4 1E-3 0.01 0.1 1 10 50 0.05 0.1 Mounted on 1in pad RqJA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 RDS(ON) - On - Resistance (W) Drain-Source On Resistance ID - Drain Current (A)VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (W) Typical Operating Characteristics (Cont.) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage 0 2 4 6 8 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.5V 3.5V VGS=5,6,7,8,9,10V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=100mA -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= 250mA

www.sinopowersemi.com6 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Typical Operating Characteristics (Cont.) Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 RON@Tj=25 o C: 1.8W VGS = 10V IDS = 100mA 0.1 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 Frequency=1MHz Crss Coss Ciss VDS=30V IDS=1A

www.sinopowersemi.com7 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 Transfer Characteristics ID-Drain Current (A) VGS - Gate-Source Voltage Typical Operating Characteristics (Cont.) 0 1 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 Tj=125 o C Tj=25 o C

www.sinopowersemi.com8 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com9 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

www.sinopowersemi.com10 SM7002NSAN Copyright ã Sinopower Semiconductor, Inc. Rev. A.8 - December, 2015 Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.