SM6102PSF SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • -60V/-72.5A, RDS(ON)= 12.5mW(max.) @ VGS=-10V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • 100% UIS Tested
  • Power Management in Desktop Computer or DC/ DC Converters P-Channel MOSFET Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Top View of TO-220 GDS SM6102PS Handling Code Temperature Range Package Code Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube (50ea/Tube) Assembly Material G : Halogen and Lead Free Device SM6102PS F : SM6102P XXXXX XXXXX - Lot Code Assembly Material G S D

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2013 www.sinopowersemi.com Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -60 VGSS Gate-Source Voltage ±25 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current -40 A IAS a Avalanche Current, Single pulse L=1mH -30 A EAS a Avalanche Energy, Single pulse L=1mH 450 mJ IDP Pulse Drain Current Tested TC=25°C -140 * TC=25°C -72.5 ID Continuous Drain Current TC=100°C -46 A TC=25°C 132 PD Maximum Power Dissipation TC=100°C 53 W RqJC Thermal Resistance-Junction to Case 0.95 RqJA Thermal Resistance-Junction to Ambient 62.5 °C/W Note *：Current limited by bond wire. Note a：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature T j=25 o C). Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2013 www.sinopowersemi.com Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -60 - - V VDS=-48V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - -30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -1 -2 -3 V IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA RDS(ON) b Drain-Source On-state Resistance V GS=-10V, IDS=-25A - 10 12.5 mW Diode Characteristics VSD b Diode Forward Voltage ISD=-1A, VGS=0V - -0.7 -1 V trr Reverse Recovery Time - 35 - ns Qrr Reverse Recovery Charge ISD=-25A, dlSD/dt=100A/ms - 37 - nC Dynamic Characteristics c RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.7 - W Ciss Input Capacitance - 4068 - Coss Output Capacitance - 495 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-30V, Frequency=1.0MHz - 281 - pF td(ON) Turn-on Delay Time - 15 - tr Turn-on Rise Time - 13 - td(OFF) Turn-off Delay Time - 119 - tf Turn-off Fall Time VDD=-30V, RL=30W, IDS=-1A, VGEN =-10V, RG=6W - 60 - ns Gate Charge Characteristics c Qg Total Gate Charge - 88 - Qgs Gate-Source Charge - 12 - Qgd Gate-Drain Charge VDS=-30V, VGS=-10V, IDS=-25A - 21 - nC Note b：Pulse test; pulse width £300ms, duty cycle£2%. Note c：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2013 www.sinopowersemi.com Typical Operating Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature ( °C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 100 125 150 TC=25 o C 0 20 40 60 80 100120140160 TC=25 o C,VG=-10V 0.1 1 10 100 300 0.1 100 500 10ms 100ms 1ms DC Rds(on) Limit TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1E-4 1E-3 0.01 0.1 RqJC :0.95 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2013 www.sinopowersemi.com Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance ( mW) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Output Characteristics -VGS - Gate - Source Voltage (V) Normalized Threshold Voltage Gate-Source On Resistance RDS(ON) - On Resistance (m W) 0 1 2 3 4 5 100 120 140 3.5V 0 20 40 60 80 100 120 140 VGS=-10V 2 3 4 5 6 7 8 9 10 IDS=-25A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2013 www.sinopowersemi.com Typical Operating Characteristics (Cont.) -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature ( °C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - source Voltage (V) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 10mW VGS = -10V IDS = -25A 0.1 100 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 1000 2000 3000 4000 5000 6000 Frequency=1MHz Crss Coss Ciss 0 15 30 45 60 75 900 VDS=-30V IDS=-25A

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2013 www.sinopowersemi.com Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) td(on) tr td(off) tf VGS VDS 90% 10% DUT 0.01W VDD VDS L IL RG tp VDD RD DUT VGS VDS RG tp

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2013 www.sinopowersemi.com

Package Information

UNIT: mm 2.54 R0.52 L e P Q D H1D1 b E/2 E A c SYMBOL MIN. MAX. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 A c D E MILLIMETERS b 0.38 1.02 TO-220 9.65 10.67 6.86 MIN. MAX. INCHES 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 0.3558.38 9.02 0.330 2.03A2 2.92 0.080 0.115 13.65 0.537 0.3508.89 2.54 BSC 0.100 BSC 0.250 0.580 P L e 12.70 6.35 14.73 0.500 Q H1 5.84 6.86 0.230 0.270 4.09 0.1613.53 0.139 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB.

Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2013 www.sinopowersemi.com Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.