SM6101PSF SINOPWER | Alldatasheet

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Technical content

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Applications

  • -60V/-132A*, RDS(ON)= 7.2mW(max.) @ VGS=-10V
  • 100% UIS + Rg Tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant)
  • 100% UIS Tested
  • Power Management in Desktop Computer or DC/ DC Converters P-Channel MOSFET Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Top View of TO-220 GDS SM6101PS Handling Code Temperature Range Package Code Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device SM6101PS F : SM6101P XXXXX XXXXX - Lot Code Assembly Material G S D

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - June, 2018 www.sinopowersemi.com Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -60 V VGSS Gate-Source Voltage ±25 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current -80 A IAS a Avalanche Current, Single pulse L=1mH 49 A EAS a Avalanche Energy, Single pulse L=1mH 1200 mJ IDP b Pulse Drain Current Tested TC=25°C -400 A ID Continuous Drain Current TC=25°C -132* TC=100°C -83 PD Maximum Power Dissipation TC=25°C 250 W TC=100°C 100 RqJC Thermal Resistance-Junction to Case 0.5 °C/W RqJA Thermal Resistance-Junction to Ambient 50 Note *：Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation current is 120A. Note a：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Note b：Pulse width is limited by max. junction temperature. Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - June, 2018 www.sinopowersemi.com Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -60 - - V IDSS Zero Gate Voltage Drain Current VDS=-48V, VGS=0V - - 1 mA TJ=85°C - - -30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -1 -2 -3 V IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA RDS(ON) c Drain-Source On-state Resistance V GS=-10V, IDS=-20A - 5.6 7.2 mW Diode Characteristics VSD c Diode Forward Voltage ISD=-1A, VGS=0V - -0.7 -1 V trr Reverse Recovery Time ISD=-20A, dlSD/dt=100A/ms - 51 - ns Qrr Reverse Recovery Charge - 90 - nC Dynamic Characteristics d RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3 - W Ciss Input Capacitance VGS=0V, VDS=-30V, Frequency=1.0MHz - 6095 - pF Coss Output Capacitance - 1080 - Crss Reverse Transfer Capacitance - 430 - td(ON) Turn-on Delay Time VDD=-30V, RL=30W, IDS=-1A, VGEN=-10V, RG=6W - 18 33 ns tr Turn-on Rise Time - 20 36 td(OFF) Turn-off Delay Time - 200 360 tf Turn-off Fall Time - 120 216 Gate Charge Characteristics d Qg Total Gate Charge VDS=-30V, VGS=-10V, IDS=-20A - 136 - nC Qgs Gate-Source Charge - 20 - Qgd Gate-Drain Charge - 33 - Note c：Pulse test; pulse width£300ms, duty cycle£2%. Note d：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - June, 2018 www.sinopowersemi.com Typical Operating Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature ( °C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature ( °C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 100 150 200 250 300 TC=25 o C 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 1E-4 1E-3 0.01 0.1 RqJC :0.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0.1 1 10 100 300 100 800 100ms 10ms 1ms DC Rds(on) Limit TC=25 o C 0 20 40 60 80 100120140160 100 125 150 TC=25 o C,VG=-10V

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - June, 2018 www.sinopowersemi.com Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance ( mW) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Output Characteristics -VGS - Gate - Source Voltage (V) Normalized Threshold Voltage Gate-Source On Resistance RDS(ON) - On Resistance (m W) 0 1 2 3 4 5 100 125 150 175 200 3.5V 0 40 80 120 160 200 VGS=10V 2 3 4 5 6 7 8 9 10 IDS=-20A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =-250mA

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - June, 2018 www.sinopowersemi.com Typical Operating Characteristics (Cont.) -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature ( °C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - source Voltage (V) -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 RON@Tj=25 o C: 5.6m W VGS = -10V IDS = -20A 0.1 100 200 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Frequency=1MHz Crss Coss Ciss 0 20 40 60 80 100 120 140 VDS= -30V IDS= -20A

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - June, 2018 www.sinopowersemi.com Avalanche Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp Switching Time Test Circuit and Waveforms td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - June, 2018 www.sinopowersemi.com Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer ’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower ’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - June, 2018 www.sinopowersemi.com Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.