SM6041CSKC-TRG

SM6041CSK SINOPWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 15

Technical content

Features

Applications

Ordering and Marking Information

• N-Channel 60V/5.1A, RDS(ON) =40mW(max.) @ VGS = 10V RDS(ON) =48mW(max.) @ VGS = 4.5V
• P-Channel -60V/-3.7A, RDS(ON) =95mW(max.) @ VGS =-10V RDS(ON) =130mW(max.) @ VGS =-4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
• ESD protection Top View of SOP-8 Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. SM6041CS Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM6041CS K : XXXXX - Lot Code Assembly Material 6041 XXXXX N-Channel MOSFET P-Channel MOSFET (5) (6) (4) (3) D1 D1 (8) (7) (2) (1) Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

www.sinopowersemi.com2 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter N Channel P Channel Unit Common Ratings VDSS Drain-Source Voltage 60 -60 VGSS Gate-Source Voltage ±20 ±20 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TA=25°C 2.5 -1 ID Continuous Drain Current TA=25°C 5.1 -3.7 IDM a Pulsed Drain Current TA=25°C 20 -14 A TA=25°C 2 2 PD Power Dissipation TA=70°C 1.3 1.3 W t £ 10s 62.5 62.5 RqJA Thermal Resistance-Junction to Ambient Steady State 90 90 RqJL Thermal Resistance-Junction to Lead Steady State 50 50 °C/W IAS b Avalanche Current, Single pulse (L=0.1mH) 16 -18 A EAS b Avalanche Energy, Single pulse (L=0.1mH) 12 16 mJ Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature Tj=25 oC).

www.sinopowersemi.com3 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 Electrical Characteristics (TA = 25°C unless otherwise noted) N Channel Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS =0V, IDS=250mA 60 - - V VDS =48V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS =VGS, IDS =250mA 1 2 3 V IGSS Gate Leakage Current VGS =±20V, V DS=0V - - ±10 mA VGS =10V, IDS=5A - 33 40 RDS(ON) Drain-Source On-state Resistance VGS =4.5V, IDS=4A - 37 48 mW Diode Characteristics VSD Diode Forward Voltage ISD=2.5A, V GS=0V - 0.8 1.3 V trr Reverse Recovery Time - 20 - ns Qrr Reverse Recovery Charge IDS=5A, dlSD/dt=100A/ ms - 20 - nC Dynamic Characteristics RG Gate Resistance VGS =0V,VDS=0V,F=1MHz - 3 - W Ciss Input Capacitance - 670 940 Coss Output Capacitance - 70 - Crss Reverse Transfer Capacitance VGS =0V, VDS =30V, Frequency=1.0MHz - 35 - pF td(ON) Turn-on Delay Time - 8 15 tr Turn-on Rise Time - 6 11 td(OFF) Turn-off Delay Time - 23 42 tf Turn-off Fall Time VDD =30V, R L=30W, IDS=1A, VGEN =10V, RG=6W - 6 11 ns Gate Charge Characteristics Qg Total Gate Charge VDS =30V, VGS=4.5V, IDS=5A - 7 - Qg Total Gate Charge - 14 20 Qgs Gate-Source Charge - 2.6 - Qgd Gate-Drain Charge - 2.6 - Qgth Threshold Gate Charge VDS =30V, VGS=10V, IDS=5A - 2.2 - nC

www.sinopowersemi.com4 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) P Channel Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V, IDS=-250μA -60 - - V VDS=-48V, VGS=0V - - -1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - -30 mA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=-250mA -1.5 -2 -2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 mA VGS=-10V, IDS=-3.7A - 75 95 RDS(ON) Drain-Source On-state Resistance VGS=-4.5V, IDS=-2A - 95 130 mW Diode Characteristics VSD Diode Forward Voltage ISD=-1A, VGS=0V - -0.7 -1 V trr Reverse Recovery Time - 20 - ns Qrr Reverse Recovery Charge Isd=-3.7A, dlSD/dt=100A/ms - 15 - nC Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 10 - W Ciss Input Capacitance - 500 - Coss Output Capacitance - 66 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-30V, Frequency=1.0MHz - 32 - pF td(ON) Turn-on Delay Time - 7.5 - tr Turn-on Rise Time - 4.5 - td(OFF) Turn-off Delay Time - 38 - tf Turn-off Fall Time VDD=-30V, RL=30W, IDS=-1A, VGEN =-10V, RG=6W - 28 - ns Gate Charge Characteristics Qg Total Gate Charge VDS=-30V, VGS=-4.5V, IDS=-3.7A - 6 - Qg Total Gate Charge - 12 - Qgs Gate-Source Charge - 1.3 - Qgd Gate-Drain Charge - 1.5 - Qgth Threshold Gate Charge VDS=-30V, VGS=-10V, IDS=-3.7A - 3 - nC

www.sinopowersemi.com5 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 ID - Drain Current (A) Drain Current TJ- Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) TJ - Junction Temperature ( °C) ID - Drain Current (A) Normalized Transient Thermal Resistance N Channel Typical Operating Characteristics 0 20 40 60 80 100120140160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=10V 0.01 0.1 1 10 100300 0.01 0.1 100 Rds(on) Limit TA=25 o C 10ms 300ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 60 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com6 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 RDS(ON) - On - Resistance (W) Drain-Source On Resistance ID - Drain Current (A) TJ - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transfer Characteristics VGS - Gate - Source Voltage (V) Normalized Threshold Voltage N Channel Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance (mW) 0 4 8 12 16 20 VGS=4.5V VGS=10V 2 3 4 5 6 7 8 9 10 IDS=5A -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA

www.sinopowersemi.com7 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance TJ - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) N Channel Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 33mW VGS = 10V IDS = 5A 0.1 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 100 200 300 400 500 600 700 800 900 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 140 VDS=30V IDS=5A

www.sinopowersemi.com8 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 Power Dissipation Ptot - Power (W) TJ- Junction Temperature ( °C) -ID - Drain Current (A) Drain Current TJ - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) -ID - Drain Current (A) Normalized Transient Thermal Resistance P Channel Typical Operating Characteristics 0 20 40 60 80 100120140160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 TA=25 o C 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA=25 o C,VG=-10V 0.01 0.1 1 10 100300 0.01 0.1 100 Rds(on) Limit TA=25 o C 10ms 300ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 60 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com9 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 RDS(ON) - On - Resistance (W) Drain-Source On Resistance -ID - Drain Current (A)-VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics TJ - Junction Temperature (°C) Gate Threshold VoltageTransfer Characteristics -VGS - Gate - Source Voltage (V) Normalized Threshold Voltage P Channel Typical Operating Characteristics (Cont.) RDS(ON) - On - Resistance (mW) 0 1 2 3 4 5 -3.5V -3V -2.5V 0 2 4 6 8 10 12 14 100 120 140 160 VGS=-4.5V VGS=-10V 2 3 4 5 6 7 8 9 10 120 150 180 210 240 IDS=-3.7A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=-250mA

www.sinopowersemi.com10 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 Drain-Source On Resistance Normalized On Resistance TJ- Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) -VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - source Voltage (V) P Channel Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 RON@Tj=25 o C: 75mW VGS = -10V IDS = -3.7A 0.1 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 100 200 300 400 500 600 700 800 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 VDS=-30V IDS=-3.7A

www.sinopowersemi.com11 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10% EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp N Channel P Channel N Channel P Channel

www.sinopowersemi.com12 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014

Package Information

UNIT: mm A A1 A2 L VIEW A 0.25 SEATING PLANE GAUGE PLANE 1.27 5.74 2.2 2.87 0.635 0.8 D e E b SEE VIEW A c h X 45 SEATING PLANE < 4 mils-T- Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. SYMBOL MIN. MAX. 1.75 0.10 0.17 0.25 0.25 A c D E e h L MILLIMETERS b 0.31 0.51 SOP-8 0.25 0.50 0.40 1.27 MIN. MAX. INCHES 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0.010 1.27 BSC 0.050 BSC A2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 - -

www.sinopowersemi.com13 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 Carrier Tape & Reel Dimensions H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 Application A H T1 C d D W E1 F 330.0± 2.00 50 MIN. 12.4+2.00 -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8 (mm)

www.sinopowersemi.com14 SM6041CSK Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

• Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.