SM6033NSF SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching N-Channel MOSFET
  • 60V/200A**, RDS(ON)= 3.4mW(max.) @ VGS= 10V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) G S D Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). GDS Top View of TO-220 Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube (50ea/tube) Assembly Material G : Halogen and Lead Free Device SM6033NS F : SM6033N XXXXX XXXXX - Lot Code SM6033NS Handling Code Temperature Range Package Code Assembly Material

www.sinopowersemi.com2Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 SM6033NSF Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 80 A Mounted on Large Heat Sink IDP Pulse Drain Current Tested TC=25°C 380* TC=25°C 200 ID Continuous Drain Current(Silicon Limited) TC=100°C 120 ID Continuous Drain Current(Wire Bond Limited) TC=25°C 120 A TC=25°C 250 PD Maximum Power Dissipation TC=100°C 100 W RqJC Thermal Resistance-Junction to Case 0.5 RqJA Thermal Resistance-Junction to Ambient 62.5 °C/W EAS Avalanche Energy, Single Pulsed L=0.5mH 625 mJ Note *：Pulse width limited by safe operating area. Note **：Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation current is 120A. Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com3Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 SM6033NSF Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS =0V, IDS=250mA 60 - - V ΔBVDSS /ΔTJ Breakdown Voltage Temp. Coefficient VGS =0V, IDS=250mA - 0.06 - V/°C VDS =48V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS =VGS, IDS =250mA 2 3 4 V IGSS Gate Leakage Current VGS =±25V, V DS=0V - - ±100 nA RDS(ON) a Drain-Source On-state Resistance VGS =10V, IDS =40A - 2.9 3.4 mW Diode Characteristics VSD a Diode Forward Voltage ISD=20A, V GS =0V - 0.8 1.1 V trr Reverse Recovery Time - 48 - ns Qrr Reverse Recovery Charge IDS=40A, dlSD/dt=100A/ ms - 72 - nC Dynamic Characteristics b RG Gate Resistance VGS =0V,VDS =0V,F=1 MHz - 1.4 - W Ciss Input Capacitance - 4850 6300 Coss Output Capacitance - 1100 - Crss Reverse Transfer Capacitance VGS =0V, VDS =30V, Frequency=1.0MHz - 260 - pF td(ON) Turn-on Delay Time - 22 40 Tr Turn-on Rise Time - 18 33 td(OFF) Turn-off Delay Time - 82 150 Tf Turn-off Fall Time VDD =30V, R L=30W, IDS=1A, VGEN =10V, RG=6W - 90 160 ns Gate Charge Characteristics b Qg Total Gate Charge - 90 130 Qgs Gate-Source Charge - 23 - Qgd Gate-Drain Charge VDS =30V, VGS=10V, IDS=40A - 21 - nC Note a：Pulse test ; pulse width £300 ms, duty cycle £2%. Note b：Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

www.sinopowersemi.com4Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 SM6033NSF Typical Operating Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100120140160 100 150 200 250 300 TC=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on minimum pad RqJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0.01 0.1 1 10 100300 0.1 100 1000 10ms 100ms DC Rds(on) Limit TC=25 o C 0 20 40 60 80 100120140160 100 120 140 TC=25 o C,VG=10V

www.sinopowersemi.com5Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 SM6033NSF VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage Typical Operating Characteristics (Cont.) VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On - Resistance (mW) Gate-Source On Resistance 100 125 150 175 200 4.5V 0 40 80 120 160 200 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 VGS=10V 3 4 5 6 7 8 9 10 IDS=40A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA

www.sinopowersemi.com6Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 SM6033NSF VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Typical Operating Characteristics (Cont.) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 2.9mW VGS = 10V IDS = 40A 0.1 100 200 Tj=150 o C Tj=25 o C 0 8 16 24 32 40 1000 2000 3000 4000 5000 6000 7000 8000 Frequency=1MHz Crss Coss Ciss 0 20 40 60 80 100 VDS= 30V IDS= 40A

www.sinopowersemi.com7Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 SM6033NSF Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

www.sinopowersemi.com8Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 SM6033NSF

Package Information

L e P Q D A c b E/2 E SYMBOL MIN. MAX. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 A c D E MILLIMETERS b 0.38 1.02 TO-220 9.65 10.67 6.86 MIN. MAX. INCHES 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 0.3558.38 9.02 0.330 2.03A2 2.92 0.080 0.115 13.65 0.537 0.3508.89 RECOMMENDED LAND PATTERN UNIT: mm 2.54 R0.52 2.54 BSC 0.100 BSC 0.250 0.580 P L e 12.70 6.35 14.73 0.500 Q H1 5.84 6.86 0.230 0.270 4.09 0.1613.53 0.139 2.54 3.43 0.100 0.135 Note: Follow JEDEC TO-220 AB.

www.sinopowersemi.com9Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 SM6033NSF Classification Profile

www.sinopowersemi.com10Copyright ã Sinopower Semiconductor, Inc. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Sinopower Semiconductor, Inc.